journal article·2021-11-24

Quantum Dot Interface-Mediated CsPbIBr2 Film Growth and Passivation for Efficient Carbon-Based Solar Cells

Xingnan Qi, Jiantao Wang, Furui Tan, Chen Dong, Kong Liu, Xiaobao Li, Lisheng Zhang, Hongkai Wu, Hsing-Lin Wang, Shengchun Qu, Zhanguo Wang, Zhijie Wang

ACS Applied Materials & Interfaces· Volume 13· Issue 46
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Abstract

CsPbIxBry-based all-inorganic perovskite materials are a potential candidate for stable semitransparent and tandem structured photovoltaic devices. However, poor film (morphological and crystalline) quality and interfacial recombination lead consequently to a decline in the photoelectric conversion performance of the applied solar cells. In this work, we incorporated PbS quantum dots (QDs) at the interface of electron transporting layer (ETL) SnO2 and perovskite to modulate the crystallization of CsPbIBr2 and the interfacial charge dynamics in carbon-based solar cells. The as-casted PbS QDs behave as seeds for lattice-matching the epitaxial growth of pinhole-free CsPbIBr2 films. The modified films with reduced defect density exhibit facilitated carrier transfer and suppressed charge recombination at the ETL/perovskite interface, contributing to an enhanced device efficiency from 7.00 to 9.09% and increased reproducibility and ambient stability. This strategic method of QD-assisted lattice-matched epitaxial growth is promising to prepare high-quality perovskite films for efficient perovskite solar cells.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, Henan 475004, P. R. China

The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, P. R. China

Department of Materials Science and Engineering, Southern University of Science and Technology, Xueyuan Avenue 1088, Shenzhen, Guangdong 518055, P. R. China

Guangdong Provincial Key Laboratory of Energy Materials for Electric Power, Southern University of Science and Technology, Xueyuan Avenue 1088, Shenzhen, Guangdong 518055, P. R. China

Department of Chemistry, Hong Kong University of Science and Technology, Clear Water Bay Road, Hong Kong 999077, P. R. China

Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

School of Civil Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China

Funding

Natural Science Foundation of Henan Province · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Henan University · Chinese Academy of Sciences · Guangdong Provincial Key Laboratory of Energy Materials for Electric Power, South University of Science and Technology · Guangdong Province · Henan Province · Shenzhen Basic Research Fund

References (47)

Show source-provided references
1. 10.1126/science.abf765210.1126/science.abf7652 ↗
2. 10.1039/D0TA08656H10.1039/D0TA08656H ↗
3. 10.1002/adma.20160066910.1002/adma.201600669 ↗
4. 10.1039/C6CS00896H10.1039/C6CS00896H ↗
5. 10.1038/s41586-021-03406-510.1038/s41586-021-03406-5 ↗
6. NREL Efficiency Chart, URL: https://www.nrel.gov/pv/cell-efficiency.html, October 10th, 2021.
7. 10.1002/anie.20191570210.1002/anie.201915702 ↗
8. 10.1039/D0TA08675D10.1039/D0TA08675D ↗
9. 10.1002/aenm.20200288210.1002/aenm.202002882 ↗
10. 10.1002/smll.20190728310.1002/smll.201907283 ↗
11. 10.1016/j.carbon.2017.05.02710.1016/j.carbon.2017.05.027 ↗
12. 10.1016/j.nanoen.2020.10516010.1016/j.nanoen.2020.105160 ↗
13. 10.1016/j.nanoen.2019.02.07510.1016/j.nanoen.2019.02.075 ↗
14. 10.1126/science.aav868010.1126/science.aav8680 ↗
15. 10.1002/adma.20200263210.1002/adma.202002632 ↗
16. 10.1002/advs.20180204610.1002/advs.201802046 ↗
17. 10.1002/aenm.20200358510.1002/aenm.202003585 ↗
18. 10.1021/acs.nanolett.9b0227710.1021/acs.nanolett.9b02277 ↗
19. 10.1021/acsami.9b2353210.1021/acsami.9b23532 ↗
20. 10.1021/acsami.9b0917110.1021/acsami.9b09171 ↗
21. 10.1002/cssc.20190061110.1002/cssc.201900611 ↗
22. 10.1002/aenm.20180378510.1002/aenm.201803785 ↗
23. 10.1002/aenm.20180050410.1002/aenm.201800504 ↗
24. 10.1002/anie.20201670310.1002/anie.202016703 ↗
25. 10.1002/aenm.20180208010.1002/aenm.201802080 ↗
26. 10.1038/s41467-018-05760-x10.1038/s41467-018-05760-x ↗
27. 10.1021/acsnano.7b0407010.1021/acsnano.7b04070 ↗
28. 10.1002/adma.20160575610.1002/adma.201605756 ↗
29. 10.1021/ja500628810.1021/ja5006288 ↗
30. 10.1039/C4EE02988G10.1039/C4EE02988G ↗
31. 10.1038/nature1456310.1038/nature14563 ↗
32. 10.1038/s41586-019-1239-710.1038/s41586-019-1239-7 ↗
33. 10.1039/C9TA03336J10.1039/C9TA03336J ↗
34. 10.1021/acsami.8b1783910.1021/acsami.8b17839 ↗
35. 10.1038/s41563-017-0006-010.1038/s41563-017-0006-0 ↗
36. 10.1126/science.aaf806010.1126/science.aaf8060 ↗
37. 10.1088/1674-4926/42/3/03170110.1088/1674-4926/42/3/031701 ↗
38. 10.1002/solr.20190033310.1002/solr.201900333 ↗
39. 10.1002/aenm.20180052510.1002/aenm.201800525 ↗
40. 10.1039/C7EE02634J10.1039/C7EE02634J ↗
41. 10.1016/j.nanoen.2017.09.03510.1016/j.nanoen.2017.09.035 ↗
42. 10.1039/c3ee42282h10.1039/c3ee42282h ↗
43. 10.1021/ja512559410.1021/ja5125594 ↗
44. 10.1002/adma.20180743510.1002/adma.201807435 ↗
45. 10.1016/j.apsusc.2019.14399010.1016/j.apsusc.2019.143990 ↗
46. 10.1021/acsami.0c2299310.1021/acsami.0c22993 ↗
47. 10.1002/adma.20200399010.1002/adma.202003990 ↗