DataVXACS Applied Materials & InterfacesPaper
journal article·2017-03-01

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

Songang Peng, Zhi Jin, Dayong Zhang, Jingyuan Shi, Dacheng Mao, Shaoqing Wang, Guanghui Yu

ACS Applied Materials & Interfaces· Volume 9· Issue 8
Publisher page
Source abstract

Abstract

(f = 10 Hz) has been fabricated. The noise has the least value at Dirac point, it then increases fast when the current deviates from that at Dirac point, the noise slightly decreases at large current. The phenomenon can be understood by the carrier-number-fluctuation induced low frequency noise, which caused by the trapping-detrapping processes of the carriers. Further analysis suggests that the effect trap density depends on the location of Fermi level in graphene channel. The study has provided guidance for suppressing the 1/f noise in graphene-based applications.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · Advanced Memory and Neural Computing · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Shanghai 200050, China

Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Funding

National Natural Science Foundation of China · Beijing Municipal Commission of Science and Technology · Key Laboratory of Microelectronic Devices Integrated Technology

References (29)

Show source-provided references
1. 10.1038/nnano.2013.14410.1038/nnano.2013.144 ↗
2. 10.1126/science.110289610.1126/science.1102896 ↗
3. 10.1038/nmat184910.1038/nmat1849 ↗
4. 10.1038/nnano.2010.8910.1038/nnano.2010.89 ↗
5. 10.1038/nature1145810.1038/nature11458 ↗
6. 10.1021/nl903665g10.1021/nl903665g ↗
7. 10.1021/nl100985z10.1021/nl100985z ↗
8. 10.1021/nn202749z10.1021/nn202749z ↗
9. 10.1103/PhysRevB.85.07543510.1103/PhysRevB.85.075435 ↗
10. 10.1063/1.367627710.1063/1.3676277 ↗
11. 10.1063/1.480275910.1063/1.4802759 ↗
12. 10.1063/1.492687210.1063/1.4926872 ↗
13. 10.1063/1.318070710.1063/1.3180707 ↗
14. 10.1038/nnano.2008.26810.1038/nnano.2008.268 ↗
15. 10.1063/1.346745410.1063/1.3467454 ↗
16. 10.1063/1.307702110.1063/1.3077021 ↗
17. 10.1109/LED.2009.203487610.1109/LED.2009.2034876 ↗
18. 10.1063/1.278108710.1063/1.2781087 ↗
19. 10.1016/0375-9601(69)90076-010.1016/0375-9601(69)90076-0 ↗
20. 10.1103/PhysRevLett.96.25660210.1103/PhysRevLett.96.256602 ↗
21. 10.1021/nn101950n10.1021/nn101950n ↗
22. 10.1126/science.121846110.1126/science.1218461 ↗
23. 10.1021/nn301760310.1021/nn3017603 ↗
24. 10.1063/1.483381610.1063/1.4833816 ↗
25. 10.1016/j.carbon.2014.11.00110.1016/j.carbon.2014.11.001 ↗
26. 10.1063/1.477249310.1063/1.4772493 ↗
27. 10.1016/j.carbon.2012.10.04610.1016/j.carbon.2012.10.046 ↗
28. 10.1063/1.478411410.1063/1.4784114 ↗
29. Sze S. M. · 1981