An Approach for an Advanced Anode Interfacial Layer with Electron-Blocking Ability to Achieve High-Efficiency Organic Photovoltaics
Source abstract
Abstract
The interfacial properties of PEDOT:PSS, pristine r-GO, and r-GO with sulfonic acid (SR-GO) in organic photovoltaic are investigated to elucidate electron-blocking property of PEDOT:PSS anode interfacial layer (AIL), and to explore the possibility of r-GO as electron-blocking layers. The SR-GO results in an optimized power conversion efficiency of 7.54% for PTB7-th:PC71BM and 5.64% for P3HT:IC61BA systems. By combining analyses of capacitance-voltage and photovoltaic-parameters dependence on light intensity, it is found that recombination process at SR-GO/active film is minimized. In contrast, the devices using r-GO without sulfonic acid show trap-assisted recombination. The enhanced electron-blocking properties in PEDOT:PSS and SR-GO AILs can be attributed to surface dipoles at AIL/acceptor. Thus, for electron-blocking, the AIL/acceptor interface should be importantly considered in OPVs. Also, by simply introducing sulfonic acid unit on r-GO, excellent contact selectivity can be realized in OPVs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Heeger Center for Advanced Materials (HCAM), School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712, Republic of Korea
Radiation Research Division for Industry and Environment, Korea Atomic Energy Research Institute (KAERI), 29 Geumgu-gil, Jeongeup-si, Jeollabuk-do, 580-185, Republic of Korea
School of Materials Science and Chemical Engineering, Kunsan National University, Kunsan, Jeollabuk-do, 753-701, Republic of Korea
Professional Graduate School of Flexible and Printable Electronics, Polymer Materials Fusion Research Center, Chonbuk National University, Jeonju-si, Jeollabuk-do, 561-756, Republic of Korea
Funding
National Research Foundation of Korea · Gwangju Institute of Science and Technology · Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology
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