journal article·2022-09-28

Flexible Threshold Switching Based on CsCu2I3 with Low Threshold Voltage and High Air Stability

Fengchang Huang, Shuaipeng Ge, Ruilai Wei, Jiaqi He, Xiaole Ma, Juan Tao, Qiuchun Lu, Xiaoming Mo, Chunfeng Wang, Caofeng Pan

ACS Applied Materials & Interfaces· Volume 14· Issue 38
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Abstract

Halide perovskites featuring remarkable optoelectronic properties hold great potential for threshold switching devices (TSDs) that are of primary importance to next-generation memristors and neuromorphic computers. However, such devices are still in their infancy due to the unsolved challenges of high threshold voltage, poor stability, and lead-containing features. Herein, a unipolar TSD based on an all-inorganic halide perovskite of CsCu2I3 is demonstrated, exhibiting the fascinating attributes of a low threshold voltage of 0.54 V, a high ON/OFF ratio of 104, robust air stability over 70 days, a steep switching slope of 6.2 mV·decade–1, and lead-free composition. Moreover, the threshold voltage can be further reduced to 0.23 V using UV illumination to reduce the barrier of iodide ion migration. The multilevel threshold switching behavior can be realized through the modulation of either the compliance current or the scan rate. The TSD with mechanical compliance and transparency is also demonstrated. This work enriches TSDs with expanded perovskite materials, boosting the related applications of this emerging class of device families.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Advanced Memory and Neural Computing · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, P. R. China

CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, P. R. China

School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Funding

Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Beijing Municipality · Shenzhen Fundamental Research Program · China Postdoctoral Science Foundation · Central University Basic Research Fund of China · Science, Technology and Innovation Commission of Shenzhen Municipality · National Natural Science Foundation of China · Science and Technology Innovation Project of Shenzhen Excellent Talents · Fundamental Research Project of Guangdong Province

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