Programmed Ultrafast Scan Welding of Cu Nanowire Networks with a Pulsed Ultraviolet Laser Beam for Transparent Conductive Electrodes and Flexible Circuits
Source abstract
Abstract
Metal nanowires (NWs) have shown superior advances for the next-generation transparent conducting (TC) materials. Most concerns were focused on uniform conductive films; however, fabrication of a programmed circuit is still lacking. Here, we demonstrate a programmable ultrafast welding method by pulsed laser beam scanning under ambient conditions to achieve a Cu NW pattern-free TC circuit as well as various size films. High-aspect ratio Cu NWs (> 3000) are synthesized through an oleylamine-mediated solution system. Pulsed ultraviolet laser irradiation together with a programmed moving station is set up for the welding of Cu NW networks. Finite element simulations reveal that the transient heating by efficient absorption of UV light (∼ 250 nm) could remove the organic residues on the surface and realize local welding of interlaced NW junctions. With only 10 ms pulsed irradiation, high optoelectronic performance (33 ohm/sq. at 87% transmittance at 550 nm) and excellent stability of the Cu NW TC film have been achieved. The line-by-line and selected route scanning modes could rapidly make large area TC films and directly write flexible circuits. Moreover, completely transparent micron-size UV and blue LED chips are fabricated and successfully lit with bright emission. This method opens up a future way of circuit and device fabrication by direct one-step laser writing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanomaterials and Printing Technologies · Advanced Sensor and Energy Harvesting Materials · Nanofabrication and Lithography Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
Department of Chemistry, Duke University, Durham, North Carolina 27708-0354, United States
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China
References (45)
Show source-provided references
1. 10.1002/smll.20160258110.1002/smll.201602581 ↗
2. 10.1038/nphoton.2012.28210.1038/nphoton.2012.282 ↗
3. 10.1002/adma.20100318810.1002/adma.201003188 ↗
4. 10.1021/acsami.5b0761910.1021/acsami.5b07619 ↗
5. 10.3390/nano603004710.3390/nano6030047 ↗
6. 10.1002/adma.20140271010.1002/adma.201402710 ↗
7. 10.1016/j.solmat.2011.09.02410.1016/j.solmat.2011.09.024 ↗
8. 10.1002/adfm.20150480410.1002/adfm.201504804 ↗
9. 10.1021/acs.chemrev.6b0017910.1021/acs.chemrev.6b00179 ↗
10. 10.1002/adma.20160118610.1002/adma.201601186 ↗
11. 10.1002/adma.20150424510.1002/adma.201504245 ↗
12. 10.1039/C6NR06156G10.1039/C6NR06156G ↗
13. 10.1002/adfm.20170443510.1002/adfm.201704435 ↗
14. 10.1021/acsami.8b0400710.1021/acsami.8b04007 ↗
15. 10.1002/admi.20170056810.1002/admi.201700568 ↗
16. 10.1021/acs.nanolett.5b0342210.1021/acs.nanolett.5b03422 ↗
17. 10.1021/acsami.9b0087510.1021/acsami.9b00875 ↗
18. 10.1039/C8NR01648H10.1039/C8NR01648H ↗
19. 10.1039/c4nr01024h10.1039/c4nr01024h ↗
20. 10.1039/C5TC03614C10.1039/C5TC03614C ↗
21. 10.1021/ic500094b10.1021/ic500094b ↗
22. 10.1002/pssa.20153276610.1002/pssa.201532766 ↗
23. 10.1038/s41598-017-15559-310.1038/s41598-017-15559-3 ↗
24. 10.1186/s11671-017-2343-y10.1186/s11671-017-2343-y ↗
25. 10.1002/adma.20140047410.1002/adma.201400474 ↗
26. 10.1021/acsami.5b0938610.1021/acsami.5b09386 ↗
27. 10.1038/s41598-018-35650-710.1038/s41598-018-35650-7 ↗
28. 10.1038/srep3208610.1038/srep32086 ↗
29. 10.1039/C5RA25548A10.1039/C5RA25548A ↗
30. 10.1038/srep0232310.1038/srep02323 ↗
31. 10.1016/j.apsusc.2017.06.05110.1016/j.apsusc.2017.06.051 ↗
32. Peter, Y.; Yu, M. C. Fundamentals of Semiconductors, Springer, Berlin, Heidelberg USA 1996, pp. 246.
33. 10.1103/PhysRevB.6.437010.1103/PhysRevB.6.4370 ↗
34. 10.1021/acsami.8b0391710.1021/acsami.8b03917 ↗
35. 10.1007/s12274-017-1837-310.1007/s12274-017-1837-3 ↗
36. 10.1021/acsomega.9b0147910.1021/acsomega.9b01479 ↗
37. 10.1021/acsami.6b0265210.1021/acsami.6b02652 ↗
38. 10.1021/acsami.6b0900910.1021/acsami.6b09009 ↗
39. 10.1016/j.compscitech.2017.04.03010.1016/j.compscitech.2017.04.030 ↗
40. 10.1016/j.apsusc.2018.10.13610.1016/j.apsusc.2018.10.136 ↗
41. 10.1002/adma.20150091710.1002/adma.201500917 ↗
42. 10.1021/acsnano.6b0450610.1021/acsnano.6b04506 ↗
43. 10.1038/s41598-018-31903-710.1038/s41598-018-31903-7 ↗
44. 10.1002/aenm.20110060810.1002/aenm.201100608 ↗
45. 10.1002/adom.20180034710.1002/adom.201800347 ↗