Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties
Abstract
Research context
OpenAlex topics: Multiferroics and related materials · ZnO doping and properties · Ferroelectric and Piezoelectric Materials
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Affiliations
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
University of Chinese Academy of Sciences, Beijing 100049, China
School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, University of Science and Technology of China, Hefei 230026, China
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, United States
Department of Physics, Beijing Normal University, Beijing 100875, China
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Jiangxi Key Laboratory for Two-Dimensional Materials · Jiangxi Engineering Laboratory for Thin Films and Devices