journal article·2021-03-24

Coexistence of Ferroelectricity and Ferromagnetism in One-Dimensional SbN and BiN Nanowires

Chao Yang, Miaogen Chen, Si Li, Xuanlin Zhang, Chenqiang Hua, Hua Bai, Chengcheng Xiao, Shengyuan A. Yang, Pimo He, Zhu-an Xu, Yunhao Lu

ACS Applied Materials & Interfaces· Volume 13· Issue 11
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Abstract

Ferroelectricity exists in a variety of three- and two-dimensional materials and is of great significance for the development of electronic devices. However, the presence of ferroelectricity in one-dimensional materials is extremely rare. Here, we predict ferroelectricity in one-dimensional SbN and BiN nanowires. Their polarization strengths are 1 order of magnitude higher than ever reported values in one-dimensional structures. Moreover, we find that spontaneous spin polarization can be generated in SbN and BiN nanowires by moderate hole doping. This is the first time the coexistence of both ferroelectricity and ferromagnetism in a one-dimensional system has been reported. Our finding not only broadens the family of one-dimensional ferroelectric materials but also offers a promising platform for novel electronic and spintronic applications.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, Department of Physics, China Jiliang University, Hangzhou 310018, China

Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics and Synergetic Innovation Center for Quantum Effects and Applications, Hunan Normal University, Changsha 410081, China

Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore

Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China

Departments of Materials and Physics, and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, London SW7 2 AZ, U.K.

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Ministry of Education - Singapore · National Natural Science Foundation of China · State Key Laboratory of High Performance Ceramics and Superfine Microstructure · Natural Science Foundation of Zhejiang Province

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