journal article·2019-08-21

Tuning Charge Carrier and Spin Transport Properties via Structural Modification of Polymer Semiconductors

Dong Li, Xiang Wang, Zuzhang Lin, Yuanhui Zheng, Qianqing Jiang, Naihang Zheng, Weifeng Zhang, Kui-juan Jin, Gui Yu

ACS Applied Materials & Interfaces· Volume 11· Issue 33
Publisher page

Abstract

Targeted design of organic semiconductors in organic spintronics is relatively limited. Therefore, four conjugated polymers with analogous structures based on isoindigo (IID) units were designed and synthesized to investigate the structure–property relationships in spin and charge carrier transport. Structural design strategies include introduction of pyridinic nitrogen atoms into IID units to change electronic structures and alteration of different branching points of alkyl chains to adjust the aggregation structure. By fabricating polymer field-effect transistors (PFETs) and organic spin valves (OSVs), all of the polymers exhibited good ambipolar field-effect properties (all of the mobilities exceeding 0.3 cm2 V–1 s–1) and relatively high magnetoresistance (MR) values (maximum up to 25%). Most importantly, it is found that the introduction of pyridinic nitrogen into the IID units can improve MR values of OSVs and electron mobilities of PFETs, whereas the extension of alkyl chain branching points can reduce MR values of the conjugated polymers. This work is the first attempt to thoroughly study the structure–property relationship in the OSVs, combined with molecular design of the conjugated polymers, which provides a guideline for molecular engineering, especially for organic spintronics.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Organic Electronics and Photovoltaics · Quantum and electron transport phenomena

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Affiliations

Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China

University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China

Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, P. R. China

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Chinese Academy of Sciences

References (49)

Show source-provided references
1. 10.1103/RevModPhys.76.32310.1103/RevModPhys.76.323 ↗
2. 10.1088/0022-3727/40/12/R0110.1088/0022-3727/40/12/R01 ↗
3. 10.1038/nnano.2007.6410.1038/nnano.2007.64 ↗
4. 10.1021/cr100380z10.1021/cr100380z ↗
5. 10.1038/nmat263310.1038/nmat2633 ↗
6. 10.1103/PhysRevLett.120.08660210.1103/PhysRevLett.120.086602 ↗
7. 10.1039/C3CC47126H10.1039/C3CC47126H ↗
8. 10.1002/adfm.20150420910.1002/adfm.201504209 ↗
9. 10.1038/nature0232510.1038/nature02325 ↗
10. 10.1103/PhysRevLett.104.23660210.1103/PhysRevLett.104.236602 ↗
11. 10.1038/nphys168810.1038/nphys1688 ↗
12. 10.1038/nmat490210.1038/nmat4902 ↗
13. 10.1002/adma.20160273910.1002/adma.201602739 ↗
14. 10.1038/nature1171910.1038/nature11719 ↗
15. 10.1021/acsami.7b0280410.1021/acsami.7b02804 ↗
16. 10.1002/adma.20140128310.1002/adma.201401283 ↗
17. 10.1038/nphys171410.1038/nphys1714 ↗
18. 10.1038/nmat291210.1038/nmat2912 ↗
19. 10.1002/adfm.20140012510.1002/adfm.201400125 ↗
20. 10.1021/acs.jpcc.5b0122210.1021/acs.jpcc.5b01222 ↗
21. 10.1002/adfm.20170360010.1002/adfm.201703600 ↗
22. 10.1021/acs.nanolett.7b0331410.1021/acs.nanolett.7b03314 ↗
23. 10.1002/admi.20150085510.1002/admi.201500855 ↗
24. 10.1126/science.aan534810.1126/science.aan5348 ↗
25. 10.1002/adma.20160363810.1002/adma.201603638 ↗
26. 10.1002/adma.20180535510.1002/adma.201805355 ↗
27. 10.1126/science.122344410.1126/science.1223444 ↗
28. 10.1002/adma.20180681710.1002/adma.201806817 ↗
29. 10.1002/adma.20150383110.1002/adma.201503831 ↗
30. 10.1103/PhysRevLett.100.22660310.1103/PhysRevLett.100.226603 ↗
31. 10.1021/am508173j10.1021/am508173j ↗
32. 10.1038/srep1946110.1038/srep19461 ↗
33. 10.1038/ncomms242310.1038/ncomms2423 ↗
34. 10.1021/acsnano.8b0746810.1021/acsnano.8b07468 ↗
35. 10.1038/srep0935510.1038/srep09355 ↗
36. 10.1039/C7TC00517B10.1039/C7TC00517B ↗
37. 10.1039/C6RA17241E10.1039/C6RA17241E ↗
38. 10.1021/acsami.7b1186310.1021/acsami.7b11863 ↗
39. 10.1038/nphys428410.1038/nphys4284 ↗
40. 10.1002/adma.20140326210.1002/adma.201403262 ↗
41. 10.1039/C5CC02104A10.1039/C5CC02104A ↗
42. 10.1021/acs.chemmater.6b0015410.1021/acs.chemmater.6b00154 ↗
43. 10.1016/j.orgel.2018.09.03210.1016/j.orgel.2018.09.032 ↗
44. 10.1039/C3MH00098B10.1039/C3MH00098B ↗
45. 10.1002/aelm.20170007810.1002/aelm.201700078 ↗
46. 10.1103/PhysRevB.81.19521410.1103/PhysRevB.81.195214 ↗
47. 10.1103/PhysRevLett.98.01660110.1103/PhysRevLett.98.016601 ↗
48. 10.1103/PhysRevB.87.07520510.1103/PhysRevB.87.075205 ↗
49. 10.1021/am402178w10.1021/am402178w ↗