Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid
Source abstract
Abstract
We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu–O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10–3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Copper-based nanomaterials and applications · Thin-Film Transistor Technologies · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
Funding
LG Display · National Research Foundation of Korea
References (27)
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