journal article·2009-12-30

Polymer Bulk Heterojunction Photovoltaic Devices with Multilayer Structures Prepared by Thermal Lamination

Motoshi Nakamura, Chunhe Yang, Erjun Zhou, Keisuke Tajima, Kazuhito Hashimoto

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Abstract

Multilayer structures consisting of two blend layers of poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61 butyric acid methyl ester (PCBM) and poly{N-[1-(2′-ethylhexyl)-3-ethylheptanyl]-dithieno[3,2-b:2′,3′-d]pyrrole-2,6-diyl-alt-4,7-di(2-thienyl)-2,1,3-benzothiadiazole-5′, 5′ ′ -diyl} (PDTPDTBT):PCBM were prepared by a simple thermal lamination technique. Both of the layers contributed to the photocurrent generation simultaneously, as shown by external quantum efficiency spectra. The recombination rate at the interfaces was largely affected by the stacking order of the layers, resulting in the difference of the fill factors. The broadened light absorption range of the multilayer devices compared to that of single-layer P3HT:PCBM devices improved the short-circuit current from 8.83 to 9.41 mA cm−2 because of the absorption of the PDTPDTBT:PCBM layer, resulting in a power conversion efficiency of 3.0% with an open circuit voltage of 0.58 V and a fill factor of 54%.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan, and HASHIMOTO Light Energy Conversion Project, Exploratory Research for Advanced Technology (ERATO), Japan Science Technology Agency (JST)

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25. This performance of the reference device (2.7%) is lower than the highest value previously achieved by thermal lamination (3.3%) with the same device configuration (see ref22.). This can be attributed to the difference in the lamination interfaces. In the previous report, the lamination interface was ITO/TiO2/P3HT:PCBM//PEDOT:PSS/Au, whereas in the current work it was ITO/TiO2//P3HT:PCBM/PEDOT:PSS/Au (// denotes the laminated interface). This change was necessary because we need to use exactly the same P3HT:PCBM layers deposited on PEDOT:PSS/Au for the accurate comparison with ITO/TiO2/PDTPDTBT:PCBM//P3HT:PCBM/PEDOT:PSS/Au devices.
26. When the same mixing ratio and layer thickness (1:1 wt, 60 nm for PDTPDTBT:C70PCBM layer and 1:0.8 wt, 250 nm for P3HT:C70PCBM layer) were used as the two BHJ layers, the device with ITO/TiO2/PDTPDTBT:PCBM//P3HT:PCBM/PEDOT:PSS/Au configuration hadISCof 8.67 mA cm−2,VOCof 0.56 V, FF of 46%, and PCE of 2.2%. The device with ITO/TiO2/P3HT:PCBM//PDTPDTBT:PCBM/PEDOT:PSS/Au hadISCof 7.36 mA cm−2,VOCof 0.52 V, FF of 28%, and PCE of 1.1%.
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