DataVXACS Applied Materials & InterfacesPaper
journal article·2017-10-25Open access

Hydrazinium Salt as Additive To Improve Film Morphology and Carrier Lifetime for High-Efficiency Planar-Heterojunction Perovskite Solar Cells via One-Step Method

Xin Zhang, Sijian Yuan, Haizhou Lu, Huotian Zhang, Pengfei Wang, Xiaolei Cui, Yin Zhang, Qi Liu, Jiao Wang, Yiqiang Zhan, Zhengyi Sun, Wei Huang

ACS Applied Materials & Interfaces· Volume 9· Issue 42
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Source abstract

Abstract

One-step solution process is the simplest method to fabricate organic–inorganic metal halide perovskite thin films, which however does not work well when employed in the planar-heterojunction (PHJ) solar cells due to the generally poor film morphology. Here we show that hydrazinium chloride can be used as an additive in the precursor solution to produce perovskite films featuring higher coverage and better crystallinity. The light absorption ability and charge carrier lifetime are both significantly improved accordingly. Under the optimal additive ratio, the average power conversion efficiency (PCE) of the inverted PHJ perovskite solar cells greatly increases by as much as 70%, and the champion device shows a satisfying PCE of 12.66%. These results suggest that N 2 H 5 Cl is a promising additive for fabricating high-efficiency perovskite solar cells via one-step method, which could be of interest in the future commercial solar cell industry.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211800, China

State Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai 200433, China

Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China

Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, Shaanxi, China

Funding

Natural Science Foundation of Shanghai · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China

References (40)

Show source-provided references
1. 10.1039/c3ta10518k10.1039/c3ta10518k ↗
2. 10.1126/science.aaa576010.1126/science.aaa5760 ↗
3. 10.1038/srep1448510.1038/srep14485 ↗
4. 10.1021/ja412583t10.1021/ja412583t ↗
5. 10.1038/srep1892210.1038/srep18922 ↗
6. 10.1021/ja809598r10.1021/ja809598r ↗
7. 10.1126/science.aan230110.1126/science.aan2301 ↗
8. 10.1021/acs.chemmater.6b0515910.1021/acs.chemmater.6b05159 ↗
9. 10.1038/nature1234010.1038/nature12340 ↗
10. 10.1021/ja411509g10.1021/ja411509g ↗
11. 10.1039/C5TA08656F10.1039/C5TA08656F ↗
12. 10.1038/nature1250910.1038/nature12509 ↗
13. 10.1039/C4EE01138D10.1039/C4EE01138D ↗
14. 10.1038/ncomms714210.1038/ncomms7142 ↗
15. 10.1021/jp508015c10.1021/jp508015c ↗
16. 10.1038/nmat401410.1038/nmat4014 ↗
17. 10.1039/C4RA13212B10.1039/C4RA13212B ↗
18. 10.1021/jp508162p10.1021/jp508162p ↗
19. 10.1039/C6TC04944C10.1039/C6TC04944C ↗
20. 10.1002/ange.20140533410.1002/ange.201405334 ↗
21. 10.1002/adma.20170107310.1002/adma.201701073 ↗
22. 10.1021/acsenergylett.7b0027810.1021/acsenergylett.7b00278 ↗
23. 10.1002/adma.20160302110.1002/adma.201603021 ↗
24. 10.1002/adma.20160380810.1002/adma.201603808 ↗
25. 10.1039/C6CP05006A10.1039/C6CP05006A ↗
26. 10.1039/C6TA08418D10.1039/C6TA08418D ↗
27. 10.1021/acsami.6b0878310.1021/acsami.6b08783 ↗
28. 10.1021/acs.nanolett.5b0406010.1021/acs.nanolett.5b04060 ↗
29. 10.1021/acsami.6b1262710.1021/acsami.6b12627 ↗
30. 10.1002/adfm.20160155710.1002/adfm.201601557 ↗
31. 10.1038/srep0695310.1038/srep06953 ↗
32. 10.1039/C4RA16253F10.1039/C4RA16253F ↗
33. 10.1016/j.optmat.2017.01.01910.1016/j.optmat.2017.01.019 ↗
34. 10.1117/1.JPE.5.05740510.1117/1.JPE.5.057405 ↗
35. 10.1039/C5TA01198A10.1039/C5TA01198A ↗
36. 10.1002/adma.20160625810.1002/adma.201606258 ↗
37. 10.1039/C5TA06870C10.1039/C5TA06870C ↗
38. 10.1038/nnano.2014.18110.1038/nnano.2014.181 ↗
39. 10.1038/ncomms678410.1038/ncomms6784 ↗
40. 10.1039/C6CP07182A10.1039/C6CP07182A ↗