Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode
Source abstract
Abstract
An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 138634, Singapore
Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
Funding
Agency for Science, Technology and Research · Singapore-MIT Alliance for Research and Technology Centre
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