journal article·2015-05-13

Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Poly(vinyl alcohol) Films

Sungjin Kim, Pei Zhao, Shinya Aikawa, Erik Einarsson, Shohei Chiashi, Shigeo Maruyama

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Abstract

The intrinsic p-type behavior of graphene field-effect transistors (FETs) under ambient conditions poses a fundamental challenge for the assembly of complex electronic devices, such as integrated circuits. In this work, we present a protocol for tunable n-type doping of graphene FETs via poly(vinyl alcohol) (PVA) coating. Using graphene grown by alcohol catalytic chemical vapor deposition, functionalization of the surface by this hydroxyl anion-rich polymer results in an evolution of the FETs from p-type to ambipolar or n-type even under ambient air conditions. The doping level of graphene is strongly related to the PVA film coating parameters, such as solution concentration, hardening temperature, and hardening time. This PVA coating proves to be a simple and stable approach to tuning the Dirac point and doping level of graphene, which is highly desirable and of great significance for the future of graphene-based electronic devices.
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Research context

OpenAlex topics: Graphene research and applications · Graphene and Nanomaterials Applications · Fullerene Chemistry and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Institute of Applied Mechanics, Zhejiang University, Hangzhou, Zhejiang 310027, China

Research Institute for Science and Technology, Kougakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan

Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States

Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, 305-8564, Japan

Funding

Ministry of Education, Culture, Sports, Science, and Technology · Japan Society for the Promotion of Science · Japan Science and Technology Agency · European Commission Directorate-General for Research and Innovation · Cadence Design Systems · VLSI Design & Education Center, University of Tokyo

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