journal article·2021-12-22

Decoding the Double/Multiple Hysteresis Loops in Antiferroelectric Materials

Tengfei Hu, Zhengqian Fu, Zhenqin Li, Meng Liu, Linlin Zhang, Ziyi Yu, Xuefeng Chen, Yunzhe Zheng, Tie Li, Yuelin Wang, Genshui Wang, Xianlin Dong, Fangfang Xu

ACS Applied Materials & Interfaces· Volume 13· Issue 50
Publisher page

Abstract

Antiferroelectric materials has become one of the most promising candidates for pulsed power capacitors. The polarization versus electric-field hysteresis loop is the key electrical property for evaluating their energy-storage performance. Here, we applied in situ biasing transmission electron microscopy to decode two representative energy-storage behaviors-namely, multiple and double hysteresis loops-in (Pb,La)(Zr,Sn,Ti)O3 system. Simultaneous structural examination and domain/defects observation establish a direct relationship between phase transitions and hysteresis loops. Sustaining a smaller period of modulated structure to a certain applied electric field and then undergoing additional transitions among varying antiferroelectric phases with increasing modulation periods before the final antiferroelectric-ferroelectric transition leads to the favorable multiple-loop configuration that realizes a high energy-storage performance. Such phenomenon is described by a model in terms of defect-driven phase transition. The distinctive mechanisms of multiple phase transition will inspire future composition-design for high switch-fielding antiferroelectric materials.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

University of Chinese Academy of Sciences, Beijing 100049, China

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China

Funding

National Natural Science Foundation of China · Shanghai Science and Technology Innovation Action Plan · Shanghai Technical Platform for Testing and Characterization on Inorganic Materials

References (42)

Show source-provided references
1. 10.1038/nature1464710.1038/nature14647 ↗
2. 10.1016/j.pmatsci.2018.12.00510.1016/j.pmatsci.2018.12.005 ↗
3. 10.1109/TUFFC.2011.203910.1109/TUFFC.2011.2039 ↗
4. 10.1002/adma.20160172710.1002/adma.201601727 ↗
5. 10.1039/C8EE03287D10.1039/C8EE03287D ↗
6. 10.1126/science.aaw810910.1126/science.aaw8109 ↗
7. 10.1039/C6RA11744A10.1039/C6RA11744A ↗
8. 10.1002/adfm.20180732110.1002/adfm.201807321 ↗
9. 10.1016/j.pmatsci.2014.01.00210.1016/j.pmatsci.2014.01.002 ↗
10. 10.1002/adma.20170182410.1002/adma.201701824 ↗
11. 10.1039/C8NR08887J10.1039/C8NR08887J ↗
12. 10.1111/jace.1277310.1111/jace.12773 ↗
13. 10.1111/j.1551-2916.2009.03015.x10.1111/j.1551-2916.2009.03015.x ↗
14. 10.1111/j.1151-2916.1997.tb02845.x10.1111/j.1151-2916.1997.tb02845.x ↗
15. 10.1016/j.actamat.2018.01.02110.1016/j.actamat.2018.01.021 ↗
16. 10.1103/PhysRev.86.21910.1103/PhysRev.86.219 ↗
17. 10.1038/srep4533510.1038/srep45335 ↗
18. 10.1111/j.1551-2916.2011.04814.x10.1111/j.1551-2916.2011.04814.x ↗
19. 10.1111/j.1551-2916.2007.01685.x10.1111/j.1551-2916.2007.01685.x ↗
20. 10.1063/1.11994010.1063/1.119940 ↗
21. 10.1021/acsami.0c0629810.1021/acsami.0c06298 ↗
22. 10.1039/C9TA02149C10.1039/C9TA02149C ↗
23. 10.1111/jace.1686310.1111/jace.16863 ↗
24. 10.1111/j.1551-2916.2012.05070.x10.1111/j.1551-2916.2012.05070.x ↗
25. 10.1016/j.cej.2020.12803210.1016/j.cej.2020.128032 ↗
26. 10.1063/1.35731510.1063/1.357315 ↗
27. 10.1103/PhysRevB.97.09411310.1103/PhysRevB.97.094113 ↗
28. 10.1063/1.36598210.1063/1.365982 ↗
29. 10.1038/srep2365910.1038/srep23659 ↗
30. 10.1103/PhysRevMaterials.4.10441710.1103/PhysRevMaterials.4.104417 ↗
31. 10.1016/j.actamat.2019.11.05010.1016/j.actamat.2019.11.050 ↗
32. 10.1103/PhysRevApplied.11.06405010.1103/PhysRevApplied.11.064050 ↗
33. 10.1103/PhysRevB.96.21410810.1103/PhysRevB.96.214108 ↗
34. 10.1007/BF0288462410.1007/BF02884624 ↗
35. 10.1002/adfm.20110122010.1002/adfm.201101220 ↗
36. 10.1039/D0MH00253D10.1039/D0MH00253D ↗
37. 10.1016/j.ceramint.2020.06.01810.1016/j.ceramint.2020.06.018 ↗
38. 10.1016/j.scriptamat.2019.11.06110.1016/j.scriptamat.2019.11.061 ↗
39. 10.1016/j.actamat.2018.05.02810.1016/j.actamat.2018.05.028 ↗
40. 10.1063/1.492815310.1063/1.4928153 ↗
41. 10.1107/S205225251501972710.1107/S2052252515019727 ↗
42. 10.1016/j.ultramic.2016.08.01810.1016/j.ultramic.2016.08.018 ↗