Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior
Source abstract
Abstract
For the first time, we report the successful fabrication of well-behaved field-effect transistors based on Nb-doped β-Ga2O3 nanobelts mechanically exfoliated from bulk single crystals. The exfoliated β-Ga2O3 nanobelts were transferred onto a purified surface of the 110 nm SiO2/Si substrate. These Nb-doped devices showed excellent electrical performance such as an ultrasmall cutoff current of ∼10 fA, a high current on/off ratio of >108, and a quite steep subthreshold swing (SS, ∼120 mV/decade). Furthermore, we investigated the temperature dependence down to 200 K, providing insightful information for its operation in a harsh environment. This work lays a foundation for wider application of Nb-doped β-Ga2O3 in nano-electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai 200240, China
Funding
Natural Science Foundation of Shanghai · National Natural Science Foundation of China
References (39)
Show source-provided references
1. 10.1103/physrev.140.a31610.1103/physrev.140.a316 ↗
2. 10.1103/physrevb.74.19512310.1103/physrevb.74.195123 ↗
3. 10.1063/1.503537210.1063/1.5035372 ↗
4. 10.1063/1.487980010.1063/1.4879800 ↗
5. 10.1063/1.133055910.1063/1.1330559 ↗
6. 10.1109/led.2018.288127410.1109/led.2018.2881274 ↗
7. 10.1088/0268-1242/31/3/03400110.1088/0268-1242/31/3/034001 ↗
8. 10.1063/1.482185810.1063/1.4821858 ↗
9. 10.1039/c6cp01987k10.1039/c6cp01987k ↗
10. 10.1109/55.4309810.1109/55.43098 ↗
11. 10.1063/1.501823810.1063/1.5018238 ↗
12. 10.7567/jjap.55.1202a210.7567/jjap.55.1202a2 ↗
13. 10.1016/j.jcrysgro.2014.07.02110.1016/j.jcrysgro.2014.07.021 ↗
14. 10.1002/crat.20100034110.1002/crat.201000341 ↗
15. 10.1143/jjap.47.850610.1143/jjap.47.8506 ↗
16. 10.1016/j.jcrysgro.2016.04.02210.1016/j.jcrysgro.2016.04.022 ↗
17. 10.1063/1.291972810.1063/1.2919728 ↗
18. 10.1016/j.tsf.2007.10.08310.1016/j.tsf.2007.10.083 ↗
19. 10.1109/led.2018.287201710.1109/led.2018.2872017 ↗
20. 10.1109/led.2016.263557910.1109/led.2016.2635579 ↗
21. 10.1007/s12274-018-2193-710.1007/s12274-018-2193-7 ↗
22. 10.1021/acsami.7b1388110.1021/acsami.7b13881 ↗
23. 10.1063/1.496065110.1063/1.4960651 ↗
24. 10.1002/aelm.20180071410.1002/aelm.201800714 ↗
25. 10.1002/aelm.20180093810.1002/aelm.201800938 ↗
26. 10.1021/acsami.8b0703010.1021/acsami.8b07030 ↗
27. 10.1039/c8tc04258f10.1039/c8tc04258f ↗
28. 10.1063/1.500073510.1063/1.5000735 ↗
29. 10.1109/led.2017.269735910.1109/led.2017.2697359 ↗
30. 10.1103/physrevb.94.19520310.1103/physrevb.94.195203 ↗
31. 10.1063/1.499426310.1063/1.4994263 ↗
32. 10.1063/1.501197110.1063/1.5011971 ↗
33. 10.1063/1.501781010.1063/1.5017810 ↗
34. 10.1109/led.2018.284189910.1109/led.2018.2841899 ↗
35. 10.1063/1.291077010.1063/1.2910770 ↗
36. 10.1002/pssa.20133067110.1002/pssa.201330671 ↗
37. 10.1021/cm00056a02610.1021/cm00056a026 ↗
38. 10.1109/led.2018.283018410.1109/led.2018.2830184 ↗
39. 10.1021/acsami.9b0916610.1021/acsami.9b09166 ↗