High-Performance Perovskite Light-Emitting Diodes with Surface Passivation of CsPbBr_xI_3–x Nanocrystals via Antisolvent-Triggered Ion-Exchange

Inorganic lead halide perovskite nanocrystals (PeNCs) have intensively drawn attention as efficient light-emitting materials for optoelectronic applications due to their fine optoelectronic properties with a high photoluminescence quantum yield and easily tunable saturated emission color. However, the poor stability of the red-emitting PeNCs has become an obstacle because of the uncontrollable iodine substitution from the PeNCs due to weak Pb–I bonding. In this work, we have demonstrated a ligand-mediated post-treatment (LMPT) method using a halide ion-pair ligand, tridodecylmethyl ammonium iodide (TrDAI), for the air stable and high-quality red-emitting PeNCs. Through the LMPT method, the optoelectronic properties of red-emitting PeNCs are dramatically improved resulting in a PLQY of 88.7% at 637 ± 2 nm emission with an increased carrier lifetime from 20.77 to 31.52 ns. We achieve highly efficient red perovskite light-emitting diodes exhibiting a maximum current efficiency of 7.69 cd A–1 and an external quantum efficiency of 6.36% at 637 ± 2 nm electroluminescence emission with a sharp full-width at half maximum of 31 nm.