journal article·2020-04-01

Electrical Contact Barriers between a Three-Dimensional Metal and Layered SnS2

Chengzhai Lv, Wenjie Yan, Tung-Ho Shieh, Yue Zhao, Gang Wu, Yanfeng Zhao, Yanhui Lv, Duan Zhang, Yanhui Chen, Sunil K. Arora, Cormac Ó Coileáin, Ching-Ray Chang, Hung Hsiang Cheng, Kuan-Ming Hung, Han-Chun Wu

ACS Applied Materials & Interfaces· Volume 12· Issue 13
Publisher page

Abstract

Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replace restrictive 3D semiconductor materials. However, contacts between metals and layered materials deviate from Schottky–Mott behavior when determined by transport methods, while X-ray photoelectron spectroscopy measurements suggest that the contacts should be at the Schottky limit. Here, we present a systematic investigation on the influence of metal selection when electrically contacting SnS2, a layered metal dichalcogenide semiconductor with the potential to replace silicon. It is found that the electrically measured barrier height depends also weakly on the work function of the metal contacts with slopes of 0.09 and −0.34 for n-type and p-type Schottky contacts, respectively. Based on the Kirchhoff voltage law and considering a current path induced by metallic defects, we found that the Schottky barrier still follows the Schottky–Mott limits and the electrically measured barrier height mainly originates from the van der Waals gap between the metal and SnS2, and the slope depends on the magnitude of the van der Waals capacitance.
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Research context

OpenAlex topics: 2D Materials and Applications · Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China

Department of Computer and Communication, Kun Shan University, Tainan 710, Taiwan, ROC

Elementary Educational College, Beijing key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, P. R. China

Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China

Centre for Nano Science and Nano Technology, Panjab University, Chandigarh 160014, India

AMBER and CRANN, School of Chemistry, Trinity College Dublin, Dublin 2, Ireland

Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC

Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, ROC

Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC

Funding

Ministry of Science and Technology of the People's Republic of China · Beijing Institute of Technology · National Natural Science Foundation of China

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