Source abstract
Abstract
This work studied the effect of thermal cleaning in metal–organic chemical vapor deposition (MOCVD) prior to p-GaN gate regrowth for normally off high-electron-mobility transistors. X-ray photoelectron spectroscopy, capacitance–voltage measurement, and atomic force microscopy were employed to identify the effects of thermal cleaning before p-GaN regrowth. It was found that the residual damage was hardly repaired at a relatively low thermal cleaning temperature, while GaN decomposition would occur at an excessively high temperature. Thermal cleaning at 850 °C for 2 min in MOCVD can effectively remove the surface contamination and alleviate the etch damage without causing any significant deterioration of the AlGaN barrier. In addition, the density of interface states (Dit) in the p-GaN gate was reduced from 1012–1013 to 1011–1012 eV–1·cm–2, resulting in a low gate reverse leakage of 0.1 nA/mm @ VDS-OFF = 180 V, a high Ion/Ioff ratio of 4 × 1010, and a relatively high threshold voltage of +1.7 V @ ID = 10 μA/mm.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Funding
Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Jiangsu Province · China Postdoctoral Science Foundation · National Natural Science Foundation of China · Natural Science Foundation of Jiangxi Province · State Key Laboratory of Reliability and Intelligence of Electrical Equipment · Key R&D Program of Jiangsu Province · Key Frontier Scientific Research Program of the Chinese Academy of Sciences · Suzhou Science and Technology Program · Science and Technology Service Network Initiative of the Chinese Academy of Sciences · Chinese Academy of Sciences Interdisciplinary Innovation Team · State Key Laboratory of Integrated Optoelectronics
References (23)
Show source-provided references
9. Okita, H.; Hikita, M.; Nishio, A.; Sato, T.; Matsunaga, K.; Matsuo, H.; Mannoh, M.; Uemoto, Y. Through recessed and regrowth gate technology for realizing process stability of GaN-GITs. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016; pp 23–26.
10.1109/ISPSD.2016.7520768 ↗