DataVXACS Applied Materials & InterfacesPaper
journal article·2017-02-08Open access

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

Mohamad I. Nugraha, Roger Häusermann, Shun Watanabe, Hiroyuki Matsui, Mykhailo Sytnyk, Wolfgang Heiss, Jun Takeya, Maria A. Loi

ACS Applied Materials & Interfaces· Volume 9· Issue 5
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Source abstract

Abstract

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.
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Research context

PolymersElectronic materials

OpenAlex topics: Quantum Dots Synthesis And Properties · Electronic and Structural Properties of Oxides · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands

Department of Advanced Materials Science, School of Frontier Sciences, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277−8561, Japan

JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan

Research Center for Organic Electronics, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan

Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen−Nürnberg, Martensstraße 7, 91058 Erlangen, Germany

Energie Campus Nürnberg, Fürther Straße 250, 90429 Nürnberg, Germany

Funding

H2020 European Research Council · Freistaat Bayern

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