High-Performance Broad-Band Photodetection Based on Graphene–MoS_2xSe_2(1–x) Alloy Engineered Phototransistors

The concept of alloy engineering has emerged as a viable technique toward tuning the band gap as well as engineering the defect levels in two-dimensional transition-metal dichalcognides (TMDCs). The possibility of synthesizing these ultrathin TMDC materials through a chemical route has opened up realistic possibilities to fabricate hybrid multifunctional devices. By synthesizing nanosheets with different composites of MoS2xSe2(1–x) (x = 0 – 1) using simple chemical methods, we systematically investigate the photoresponse properties of three terminal hybrid devices by decorating large-area graphene with these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them, the graphene–MoSSe hybrid phototransistor exhibits optoelectronic properties superior to those of its binary counterparts. The device exhibits extremely high photoresponsivity (>104 A/W), low noise equivalent power (∼10–14 W/Hz0.5), and higher specific detectivity (∼1011 jones) in the wide UV–NIR (365–810 nm) range with excellent gate tunability. The broad-band light absorption of MoSSe, ultrafast charge transport in graphene, and controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large-area scalability with the wafer-scale production of MoS2xSe2(1–x) alloys, having important implications toward the facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van der Waals materials.