Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions
Source abstract
Abstract
A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 as a model MFTJ system, we demonstrate asymmetrical Mn-Ti sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3 interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Multiferroics and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, P. R. China
Department of Physics, Pennsylvania State University, University Park 16802, United States
Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, P. R. China
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Division of Materials Research · Hefei Science Center, Chinese Academy of Sciences
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