Organic Single-Crystal Transistor with Unique Photo Responses and Its Application as Light-Stimulated Synaptic Devices
Source abstract
Abstract
Tremendous progress has been achieved on organic transistor-based photodetectors; however, because of the nonpositive correlation relationship between the photo/dark current ratio (P) and the gate voltage, the claimed best P, R (photoresponsivity), and D* (detectivity) can hardly be obtained simultaneously at a given gate voltage, which severely compromises the device performance. Here, a light and voltage dually gated transistor based on an organic semiconducting single crystal of 2,6-dithienylanthracene (DTAnt) is developed. Attributing to its very low on/off ratio in the dark and the remarkable increment of mobilities under illumination, this phototransistor shows good performance with a P of 3.83 × 103, R of 1.32 A W–1, and D* of 1.94 × 1012 Jones achieved simultaneously at Vg = −100 V. Besides, the good reversibility and repeatability of its light-responsive behavior allows for the construction of an artificial photonic neuromorphic device with demonstrated synaptic functions, including excitatory postsynaptic current, short/long-term memory , and pair-pulse facilitation/depression.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 350002, P. R. China
University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
Funding
Fujian Institute of Research on the Structure of Matter · National Natural Science Foundation of China
References (31)
Show source-provided references
1. 10.1002/adfm.20190633510.1002/adfm.201906335 ↗
2. 10.1021/acsami.8b1159610.1021/acsami.8b11596 ↗
3. 10.1021/acsaelm.9b0058810.1021/acsaelm.9b00588 ↗
4. 10.1002/adma.20170299310.1002/adma.201702993 ↗
5. 10.1002/adma.20170626010.1002/adma.201706260 ↗
6. 10.1002/adma.20180104810.1002/adma.201801048 ↗
7. 10.1002/advs.20170044210.1002/advs.201700442 ↗
8. 10.1039/c7ta05583h10.1039/c7ta05583h ↗
9. 10.1002/adfm.20190370010.1002/adfm.201903700 ↗
10. 10.1007/s40843-018-9369-510.1007/s40843-018-9369-5 ↗
11. 10.1038/nphoton.2014.9310.1038/nphoton.2014.93 ↗
12. 10.1002/adma.20140227110.1002/adma.201402271 ↗
13. 10.1021/acsami.8b0503610.1021/acsami.8b05036 ↗
14. 10.1038/s41467-018-07943-y10.1038/s41467-018-07943-y ↗
15. 10.1039/c2jm14179e10.1039/c2jm14179e ↗
16. 10.1002/adma.20180365510.1002/adma.201803655 ↗
17. 10.1021/acsami.7b1665810.1021/acsami.7b16658 ↗
18. 10.1016/j.mattod.2018.07.01810.1016/j.mattod.2018.07.018 ↗
19. 10.1002/adma.20170095110.1002/adma.201700951 ↗
20. 10.1021/acsnano.6b0789410.1021/acsnano.6b07894 ↗
21. 10.1039/c8nr07133k10.1039/c8nr07133k ↗
22. 10.1039/c8nr00914g10.1039/c8nr00914g ↗
23. 10.1002/adma.20150271910.1002/adma.201502719 ↗
24. 10.1002/adfm.20180559910.1002/adfm.201805599 ↗
25. 10.1021/acsnano.8b0383110.1021/acsnano.8b03831 ↗
26. 10.1002/adma.20180396110.1002/adma.201803961 ↗
27. 10.1021/ja043189d10.1021/ja043189d ↗
28. 10.1143/apex.5.08200210.1143/apex.5.082002 ↗
29. 10.1103/physrevb.70.04531410.1103/physrevb.70.045314 ↗
30. 10.1073/pnas.120384810910.1073/pnas.1203848109 ↗
31. 10.1038/s41427-019-0182-210.1038/s41427-019-0182-2 ↗