DataVXACS Applied Materials & InterfacesPaper
journal article·2020-02-05

High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions

Gaoqiang Deng, Yuantao Zhang, Ye Yu, Xu Han, Yang Wang, Zhifeng Shi, Xin Dong, Baolin Zhang, Guotong Du, Yang Liu

ACS Applied Materials & Interfaces· Volume 12· Issue 5
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Source abstract

Abstract

Effective ultraviolet light-emitting diodes (LEDs) were fabricated by clamping the n-ZnO films on the top of p-hBN/p-GaN/sapphire substrates. An ultraviolet emission originating from ZnO was measured from the diode under a forward bias, the electroluminescence (EL) spectra of which show a peak wavelength of ∼376 nm with a narrow full-width at half maximum of ∼12 nm. Compared with the reference diode fabricated by directly growing n-ZnO on the p-hBN substrates using metal-organic chemical vapor deposition, the proposed diode showed a dramatic increment of the EL intensity; meanwhile, its emission onset lowered down considerably. The improved optical property of the proposed LED is mainly ascribed to suppressing the formation of the BNO-related layer at the n-ZnO/p-hBN interface. The present work provides a simple and feasible approach for developing advanced ZnO-based optoelectronic devices.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China

Department of Physics and Engineering, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, Guangzhou 510275, China

Funding

Ministry of Science and Technology of the People's Republic of China · People's Government of Jilin Province · National Natural Science Foundation of China · State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen Unversity

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