Strain-Induced Anisotropic Transport Properties of LaBaCo₂O_{5.5+δ} Thin Films on NdGaO₃ Substrates

Ming Liu; Qiang Zou; Chunrui Ma; Greg Collins; Shao-Bo Mi; Chun-Lin Jia; Haiming Guo; Hongjun Gao; Chonglin Chen

doi:10.1021/am502448k

journal article·2014-06-11

Strain-Induced Anisotropic Transport Properties of LaBaCo₂O_5.5+δ Thin Films on NdGaO₃ Substrates

Ming Liu, Qiang Zou, Chunrui Ma, Greg Collins, Shao-Bo Mi, Chun-Lin Jia, Haiming Guo, Hongjun Gao, Chonglin Chen

ACS Applied Materials & Interfaces· Volume 6· Issue 11

Publisher page

Source abstract

Abstract

Thin films of double-perovskite structural LaBaCo2O5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials Materials processing

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Advancements in Solid Oxide Fuel Cells

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China

Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, United States

Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

References (34)

Show source-provided references

1. Qi T. F. · Phys. Rev. Lett. · 2010 · 105 · 17720

2. Bao W. · Phys. Rev. Lett. · 2008 · 100 · 24720310.1103/PhysRevLett.100.247203 ↗

3. Xiong G. C. · Appl. Phys. Lett. · 1995 · 66 · 168910.1063/1.113894 ↗

4. Jacobson A. J. · Chem. Mater. · 2010 · 22 · 66010.1021/cm902640j ↗

5. DeSouza R. A. · Solid State Ionics · 1998 · 106 · 17510.1016/S0167-2738(97)00499-2 ↗

6. Post M. L. · Sens. Actuators, B · 1999 · 59 · 19010.1016/S0925-4005(99)00219-1 ↗

7. Wang D. · J. Appl. Phys. · 2008 · 104 · 02353010.1063/1.2957073 ↗

8. Wang S. · Solid State Ionics · 2001 · 140 · 12510.1016/S0167-2738(01)00709-3 ↗

9. Fauth F. · Phys. Rev. B · 2002 · 65 · 06040110.1103/PhysRevB.65.060401 ↗

10. Luo G. P. · Appl. Phys. Lett. · 2000 · 76 · 190810.1063/1.126208 ↗

11. Taskin A. A. · Appl. Phys. Lett. · 2005 · 86 · 09191010.1063/1.1864244 ↗

12. Kim G. · Appl. Phys. Lett. · 2006 · 88 · 02410310.1063/1.2163257 ↗

13. Kim G. · J. Mater. Chem. · 2007 · 17 · 250010.1039/b618345j ↗

14. Yuan Z. · Appl. Phys. Lett. · 2007 · 90 · 21211110.1063/1.2741407 ↗

15. Fauth F. · Eur. Phys. J. B · 2001 · 21 · 16310.1007/PL00011119 ↗

16. Nakajima T. · J. Phys. Soc. Jpn. · 2005 · 74 · 157210.1143/JPSJ.74.1572 ↗

17. Kundu A. K. · Phys. Rev. B · 2007 · 76 · 18443210.1103/PhysRevB.76.184432 ↗

18. Rautama E. L. · Chem. Mater. · 2008 · 20 · 274210.1021/cm703314p ↗

19. Rautama E. L. · Chem. Mater. · 2009 · 21 · 10210.1021/cm8021775 ↗

20. Liu J. · Chem. Mater. · 2010 · 22 · 79910.1021/cm901479g ↗

21. Liu J. · Appl. Phys. Lett. · 2010 · 97 · 09410110.1063/1.3484964 ↗

22. Liu M. · Appl. Phys. Lett. · 2010 · 96 · 13210610.1063/1.3378877 ↗

23. Ma C. R. · ACS Appl. Mater. Interfaces · 2013 · 5 · 45110.1021/am302553y ↗

24. Liu M. · ACS Appl. Mater. Interfaces · 2012 · 4 · 552410.1021/am301427c ↗

25. Lu H. L. · ACS Appl. Mater. Interfaces · 2010 · 2 · 249610.1021/am100542n ↗

26. Ma C. R. · ACS Appl. Mater. Interfaces · 2014 · 6 · 254010.1021/am404951v ↗

27. Lin Y. · Appl. Phys. Lett. · 2005 · 86 · 14290210.1063/1.1897078 ↗

28. Lin Y. · Appl. Phys. Lett. · 2004 · 84 · 57710.1063/1.1643546 ↗

29. Huang Z. · Phys. Rev. B · 2012 · 82 · 01441010.1103/PhysRevB.86.014410 ↗

30. Schmidbauer M. · Acta Crystallogr., Sect. B: Struct. Sci. · 2012 · 68 · 810.1107/S0108768111046738 ↗

31. Zou Q. · ACS Appl. Mater. Interfaces · 2014 · 6 · 670410.1021/am500422j ↗

32. Xie C. K. · Appl. Phys. Lett. · 2008 · 93 · 18250710.1063/1.3011031 ↗

33. Xiong Y. M. · J. Appl. Phys. · 2005 · 97 · 08390910.1063/1.1870118 ↗

34. Ward T. Z. · Nat. Phys. · 2009 · 5 · 88510.1038/nphys1419 ↗