journal article·2022-09-14

Mitigating Voc Loss in Tin Perovskite Solar Cells via Simultaneous Suppression of Bulk and Interface Nonradiative Recombination

Yali Chen, Kun Wang, Heng Qi, Youqian Zhang, Ting Wang, Yu Tong, Hongqiang Wang

ACS Applied Materials & Interfaces· Volume 14· Issue 36
Publisher page

Abstract

Tin-based perovskite solar cells (PSCs) have recently attracted extensive attention as a promising alternative to lead-based counterparts due to their low toxicity and narrow band gap. However, the severe open-circuit voltage (Voc) loss remains one of the most significant obstacles to further improving photovoltaic performance. Herein, we report an effective approach to reducing the Voc loss of tin-based PSCs. We find that introducing ethylammonium bromide (EABr) as an additive into the tin perovskite film can effectively reduce defect density both in the tin perovskite film and at the surface as well as optimize the energy level alignment between the perovskite layer and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) transport material, thereby suppressing nonradiative recombination both in the bulk film and at the interface. Furthermore, it is demonstrated that the Voc loss is gradually mitigated along with increasing storage duration due to the slow passivation effect. As a result, a remarkable Voc of 0.83 V is achieved in the devices optimized with the EABr additive, which shows a significantly improved power conversion efficiency (PCE) of 10.80% and good stability.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Xi’an 710072, P. R. China

School of Microelectronics, Northwestern Polytechnical University, Xi’an 710072, P. R. China

Shenzhen Research Institute of Northwestern Polytechnical University Shenzhen 518057, P. R. China

Funding

Ministry of Education of the People's Republic of China · National Natural Science Foundation of China · Basic Research Programs of Taicang 2021 · Guangdong Basic and Applied Basic Research Foundation

References (44)

Show source-provided references
1. 10.1126/science.124398210.1126/science.1243982 ↗
2. 10.1002/adma.20140199110.1002/adma.201401991 ↗
3. 10.1021/acs.jpclett.5b0186510.1021/acs.jpclett.5b01865 ↗
4. 10.1038/s41586-021-03964-810.1038/s41586-021-03964-8 ↗
5. 10.1016/j.joule.2021.03.00110.1016/j.joule.2021.03.001 ↗
6. 10.1021/acsenergylett.0c0078210.1021/acsenergylett.0c00782 ↗
7. 10.1021/jacs.5b0102510.1021/jacs.5b01025 ↗
8. 10.1002/adma.20150197810.1002/adma.201501978 ↗
9. 10.1021/acs.chemmater.5b0198910.1021/acs.chemmater.5b01989 ↗
10. 10.1021/acsenergylett.7b0017110.1021/acsenergylett.7b00171 ↗
11. 10.1021/jacs.7b1073910.1021/jacs.7b10739 ↗
12. 10.1002/adma.20210205510.1002/adma.202102055 ↗
13. 10.1016/j.matt.2021.12.01310.1016/j.matt.2021.12.013 ↗
14. 10.1021/jacs.1c0303210.1021/jacs.1c03032 ↗
15. 10.1002/adma.20210159010.1002/adma.202101590 ↗
16. 10.1039/D1EE02897A10.1039/D1EE02897A ↗
17. 10.1002/adfm.20210883210.1002/adfm.202108832 ↗
18. 10.1021/acsenergylett.7b0063610.1021/acsenergylett.7b00636 ↗
19. 10.1021/acsami.1c0140810.1021/acsami.1c01408 ↗
20. 10.1039/D0EE01845G10.1039/D0EE01845G ↗
21. 10.1002/adfm.20210963110.1002/adfm.202109631 ↗
22. 10.1038/s41467-020-15078-210.1038/s41467-020-15078-2 ↗
23. 10.1016/j.cej.2020.12513310.1016/j.cej.2020.125133 ↗
24. 10.1002/adom.20210075510.1002/adom.202100755 ↗
25. 10.1016/j.nanoen.2019.04.04010.1016/j.nanoen.2019.04.040 ↗
26. 10.1021/jacs.7b0181510.1021/jacs.7b01815 ↗
27. 10.1038/s41467-018-05760-x10.1038/s41467-018-05760-x ↗
28. 10.1002/adfm.20210434410.1002/adfm.202104344 ↗
29. 10.1039/C8EE00956B10.1039/C8EE00956B ↗
30. 10.1016/j.nanoen.2020.10485810.1016/j.nanoen.2020.104858 ↗
31. 10.1002/adma.20190762310.1002/adma.201907623 ↗
32. 10.1021/acsenergylett.1c0264510.1021/acsenergylett.1c02645 ↗
33. 10.1021/acsenergylett.0c0096010.1021/acsenergylett.0c00960 ↗
34. 10.1016/j.joule.2020.03.00710.1016/j.joule.2020.03.007 ↗
35. 10.1002/adfm.20210771010.1002/adfm.202107710 ↗
36. 10.1039/C9TA08679J10.1039/C9TA08679J ↗
37. 10.1016/j.jechem.2021.07.01110.1016/j.jechem.2021.07.011 ↗
38. 10.1016/j.cej.2020.12490310.1016/j.cej.2020.124903 ↗
39. 10.1021/acsenergylett.0c0052610.1021/acsenergylett.0c00526 ↗
40. 10.1021/acsenergylett.0c0063410.1021/acsenergylett.0c00634 ↗
41. 10.1002/anie.20201098710.1002/anie.202010987 ↗
42. 10.1002/adma.20200497910.1002/adma.202004979 ↗
43. 10.1021/acs.jpclett.1c0310710.1021/acs.jpclett.1c03107 ↗
44. 10.1002/adma.20180483510.1002/adma.201804835 ↗