Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon
Source abstract
Abstract
Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO3 films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (ε > 0.8%) in films greater than one hundred nanometers thick, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6071, United States
Funding
Agencia Estatal de Investigaci??n · European Commission · China Scholarship Council · Generalitat de Catalunya · Ministerio de Ciencia, Innovaci??n y Universidades
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