Atomic Layer Deposition of V_1–xMo_xO₂ Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation

V 1– x Mo x O 2 thin films were fabricated by nanolamination of VO 2 /MoO 3 alternating layers using atomic layer deposition (ALD) process, in which tetrakis-dimethyl-amino vanadium(IV) [V(NMe 2 ) 4 ] and molybdenum hexacarbonyl(VI) [Mo(CO) 6 ] were used as vanadium and molybdenum precursors, respectively. The dopant content of V 1– x Mo x O 2 films was controlled by adjusting MoO 3 cycle percentage ( P Mo ) in ALD pulse sequence, which varied from 2 to 10%. Effects of P Mo on V 1– x Mo x O 2 crystal structure, morphology, semiconductor-to-metal transition properties, and optical transmittance were studied. A linear reduction of phase transition temperature ( T c ) by approximately −11 °C/cycle % Mo was observed for V 1– x Mo x O 2 films within P Mo ≤ 5%. Notably, dramatic enhanced luminous transmittance ( T lum = 63.8%) and solar modulation (Δ T sol = 23.5%) were observed for V 1– x Mo x O 2 film with P Mo = 7%.