DataVXACS Applied Materials & InterfacesPaper
journal article·2019-09-25

High-Concentration Niobium-Substituted WS2 Basal Domains with Reconfigured Electronic Band Structure for Hydrogen Evolution Reaction

Mei Er Pam, Junping Hu, Yee Sin Ang, Shaozhuan Huang, Dezhi Kong, Yumeng Shi, Xiaoxu Zhao, Dechao Geng, Stephen J. Pennycook, Lay Kee Ang, Hui Ying Yang

ACS Applied Materials & Interfaces· Volume 11· Issue 38
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Source abstract

Abstract

Extrinsically controlling the intrinsic activity and stability of two-dimensional (2D) semiconducting materials by substitutional doping is crucial for energy-related applications. However, an in situ transition-metal doping strategy for uniform and large-area chemical vapor deposited 2D semiconductors remains a formidable challenge. Here, we successfully synthesize highly uniform niobium-substituted tungsten disulfide (Nb-WS2) monolayers, with a doping concentration of nearly 7% and sizes reaching 100 μm, through a metal dopant precursor route, using salt-catalyzed chemical vapor deposition (CVD). Our results reveal unusual effects in the structural, optical, electronic, and electrocatalysis characteristics of the Nb-WS2 monolayer. The Nb dopants readily induce a band restructuring effect, providing the most active site with a hydrogen adsorption energy of 0.175 eV and hence greatly improving its hydrogen evolution activity. The combined advantages of the unusual physics and chemistry by in situ CVD doping technique open the possibility in designing 2D-material-based electronics and catalysts of novel functionalities.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materialsCatalysis & surfacesMaterials processing

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore

NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore 117456, Singapore

Funding

Agency for Science, Technology and Research · Ministry of Education - Singapore · Shenzhen Science and Technology Innovation Commission · Department of Education of Guangdong Province · National University of Singapore · National Natural Science Foundation of China · Central Committee of the Communist Party of China · Shenzhen Municipality

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