journal article·2018-05-30Open access

Surface Properties of Laser-Treated Molybdenum Disulfide Nanosheets for Optoelectronic Applications

Abdullah Alrasheed, Justin M. Gorham, Bien Cuong Tran Khac, Fadhel Alsaffar, Frank W. DelRio, Koo-Hyun Chung, Moh. R. Amer

ACS Applied Materials & Interfaces· Volume 10· Issue 21

Abstract

Transition metal dichalcogenide two-dimensional materials have attracted significant attention due to their unique optical, mechanical, and electronic properties. For example, molybdenum disulfide (MoS2) exhibits a tunable band gap that strongly depends on the numbers of layers, which makes it an attractive material for optoelectronic applications. In addition, recent reports have shown that laser thinning can be used to engineer an MoS2 monolayer with specific shapes and dimensions. Here, we study laser-thinned MoS2 in both ambient and vacuum conditions via confocal μ-Raman spectroscopy, imaging X-ray photoelectron spectroscopy (i-XPS), and atomic force microscopy (AFM). For low laser powers in ambient environments, there is insufficient energy to oxidize MoS2, which leads to etching and redeposition of amorphous MoS2 on the nanosheet as confirmed by AFM. At high powers in ambient, the laser energy and oxygen environment enable both MoS2 nanoparticle formation and nanosheet oxidation as revealed in AFM and i-XPS. At comparable laser power densities in vacuum, MoS2 oxidation is suppressed and the particle density is reduced as compared to ambient. The extent of nanoparticle formation and nanosheet oxidation in each of these regimes is found to be dependent on the number of layers and laser treatment time. Our results can shed some light on the underlying mechanism of which atomically thin MoS2 nanosheets exhibit under high incident laser power for future optoelectronic applications.
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Research context

OpenAlex topics: 2D Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh 11442, Saudi Arabia

Materials Measurement Science Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States

School of Mechanical Engineering, University of Ulsan, Ulsan 44610, South Korea

Applied Chemicals and Materials Division, Material Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305, United States

Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States

Funding

National Institute of Standards and Technology · National Research Foundation of Korea · Division of Electrical, Communications and Cyber Systems · King Abdulaziz City for Science and Technology

References (33)

Show source-provided references
1. 10.1002/anie.20150821610.1002/anie.201508216 ↗
2. 10.1016/j.apsusc.2017.05.05810.1016/j.apsusc.2017.05.058 ↗
3. 10.1016/j.apsusc.2017.06.24810.1016/j.apsusc.2017.06.248 ↗
4. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
5. 10.1073/pnas.050284810210.1073/pnas.0502848102 ↗
6. 10.1021/nl903868w10.1021/nl903868w ↗
7. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
8. 10.1021/nn202455710.1021/nn2024557 ↗
9. 10.1021/nl500666m10.1021/nl500666m ↗
10. 10.1039/C5NR05768J10.1039/C5NR05768J ↗
11. 10.1039/C3NR03101B10.1039/C3NR03101B ↗
12. 10.1002/smll.20130154210.1002/smll.201301542 ↗
13. 10.1088/0957-4484/26/35/35570610.1088/0957-4484/26/35/355706 ↗
14. 10.1038/srep1994510.1038/srep19945 ↗
15. 10.1021/nn400644t10.1021/nn400644t ↗
16. 10.1021/nl301164v10.1021/nl301164v ↗
17. 10.1021/acsnano.6b0089510.1021/acsnano.6b00895 ↗
18. 10.1021/acsami.5b0938210.1021/acsami.5b09382 ↗
19. 10.1021/nn100393710.1021/nn1003937 ↗
20. 10.1021/j100095a00710.1021/j100095a007 ↗
21. 10.1002/sia.599210.1002/sia.5992 ↗
22. 10.1016/j.apsusc.2014.11.07710.1016/j.apsusc.2014.11.077 ↗
23. 10.1016/j.elspec.2016.08.00410.1016/j.elspec.2016.08.004 ↗
24. 10.1002/sia.597010.1002/sia.5970 ↗
25. 10.1016/j.physrep.2004.10.00610.1016/j.physrep.2004.10.006 ↗
26. 10.1021/acs.nanolett.5b0454010.1021/acs.nanolett.5b04540 ↗
27. 10.1021/jp512540u10.1021/jp512540u ↗
28. 10.1103/PhysRevB.93.03541410.1103/PhysRevB.93.035414 ↗
29. 10.1021/am502359k10.1021/am502359k ↗
30. 10.1021/nn500532f10.1021/nn500532f ↗
31. 10.1016/j.carbon.2005.10.02410.1016/j.carbon.2005.10.024 ↗
32. 10.1016/j.carbon.2015.10.07310.1016/j.carbon.2015.10.073 ↗
33. Naumkin, A. V.; Kraut-Vass, A.; Powell, C. J. NIST X-ray Photoelectron Spectroscopy Database, version 4.1; Measurement Services Division of the National Institute of Standards and Technology (NIST) Technology Services: Gaithersburg MD, 2000.