journal article·2021-01-20

High-Performance Phototransistors Based on MnPSe3 and Its Hybrid Structures with Au Nanoparticles

Xu Han, Pengbo Song, Jie Xing, Zhong Chen, Danyang Li, Guangyuan Xu, Xiaojun Zhao, Fangyuan Ma, Dongke Rong, Youguo Shi, Md. Rasidul Islam, Kong Liu, Yuan Huang

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Abstract

Layered metal thiophosphates with a general formula MPX3 (M is a group VIIB or VIII element and X is a chalcogen) have emerged as a novel member in a two-dimensional (2D) family with fascinating physical and chemical properties. Herein, the photoelectric performance of the few-layer MnPSe3 was studied for the first time. The multilayer MnPSe3 shows p-type conductivity and its field-effect transistor delivers an ultralow dark current of about 0.1 pA. The photoswitching ratio reaches ∼103 at a wavelength of 375 nm, superior to that of other thiophosphates. A responsivity and detectivity of 392.78 mA/W and 2.19 × 109 Jones, respectively, have been demonstrated under irradiation of 375 nm laser with a power intensity of 0.1 mW/cm2. In particular, the photocurrent can be remarkably increased up to 30 times by integrating a layer of Au nanoparticle array at the bottom of the MnPSe3 layer. The metal–semiconductor interfacial electric field and the strain-induced flexoelectric polarization field caused by the underlying nanorugged Au nanoparticles are proposed to contribute together to the significant current improvement.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Science, China University of Geosciences, Beijing 100083, China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

School of Mechanical and Electronic Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, China

Key laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Beijing Municipality · Youth Innovation Promotion Association of the Chinese Academy of Sciences · Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety · National Natural Science Foundation of China

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