High-Efficient Solar Cells Textured by Cu/Ag-Cocatalyzed Chemical Etching on Diamond Wire Sawing Multicrystalline Silicon
Source abstract
Abstract
We reported a novel texture method through one-step Cu/Ag-cocatalyzed chemical etching which can be widely used in the photovoltaic industry because of its simple and low-cost process. The etching mechanism of an inverted rectangular pyramid is the cooperation of Ag-catalyzed vertical etching and Cu-catalyzed lateral etching. In our texture method, neither saw damage removal nor post-treatment is needed. During the etching process, the digging holes by Ag-catalyzed etching and enlarging holes by Cu-catalyzed etching completed at the same step. Benefiting from the excellent light-trapping and passivation effect of the inverted rectangular pyramid, diamond wire sawing multicrystalline silicon (mc-Si) Al-BSF solar cells with a super high efficiency of 19.49% had been obtained.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Funding
National Natural Science Foundation of China · Government of Jiangsu Province
References (34)
Show source-provided references
1. 10.1002/pip.236310.1002/pip.2363 ↗
2. 10.1016/j.solmat.2011.11.02810.1016/j.solmat.2011.11.028 ↗
3. 10.1016/j.solmat.2016.04.01410.1016/j.solmat.2016.04.014 ↗
4. 10.1063/1.497719110.1063/1.4977191 ↗
5. 10.1088/0957-4484/16/8/07310.1088/0957-4484/16/8/073 ↗
6. 10.1016/j.solmat.2014.11.01610.1016/j.solmat.2014.11.016 ↗
7. 10.1016/j.solmat.2014.04.00110.1016/j.solmat.2014.04.001 ↗
8. 10.1016/j.mssp.2014.01.03010.1016/j.mssp.2014.01.030 ↗
9. 10.1016/j.egypro.2012.07.08210.1016/j.egypro.2012.07.082 ↗
10. 10.7567/jjap.51.04500110.7567/jjap.51.045001 ↗
11. 10.1002/pssr.20151021910.1002/pssr.201510219 ↗
12. 10.1016/j.solmat.2016.03.03110.1016/j.solmat.2016.03.031 ↗
13. 10.1016/j.solener.2011.03.01210.1016/j.solener.2011.03.012 ↗
14. 10.1016/j.scriptamat.2012.10.02310.1016/j.scriptamat.2012.10.023 ↗
15. 10.1016/j.solmat.2014.11.00810.1016/j.solmat.2014.11.008 ↗
16. 10.1038/srep1084310.1038/srep10843 ↗
17. 10.1039/c6nr08126f10.1039/c6nr08126f ↗
18. 10.1021/acsami.5b1095910.1021/acsami.5b10959 ↗
19. 10.1016/j.mssp.2014.02.00510.1016/j.mssp.2014.02.005 ↗
20. 10.1016/j.apsusc.2016.02.02810.1016/j.apsusc.2016.02.028 ↗
21. 10.1002/adma.20100178410.1002/adma.201001784 ↗
22. 10.1002/smll.20110179210.1002/smll.201101792 ↗
23. 10.1002/chem.20060003210.1002/chem.200600032 ↗
24. 10.1088/0957-4484/17/15/02610.1088/0957-4484/17/15/026 ↗
25. 10.1109/jphotov.2016.255977910.1109/jphotov.2016.2559779 ↗
26. 10.1038/s41598-018-21877-x10.1038/s41598-018-21877-x ↗
27. 10.1039/c4ta02006e10.1039/c4ta02006e ↗
28. 10.1016/j.solmat.2017.03.01710.1016/j.solmat.2017.03.017 ↗
29. 10.1109/jphotov.2016.262692110.1109/jphotov.2016.2626921 ↗
30. 10.1149/2.0191508jss10.1149/2.0191508jss ↗
31. 10.1016/j.apsusc.2018.03.08510.1016/j.apsusc.2018.03.085 ↗
32. 10.1109/jphotov.2016.263130410.1109/jphotov.2016.2631304 ↗
33. 10.1016/j.solmat.2005.02.01910.1016/j.solmat.2005.02.019 ↗
34. 10.1109/jphotov.2015.239293710.1109/jphotov.2015.2392937 ↗