Dual Influence of Reduction Annealing on Diffused Hematite/FTO Junction for Enhanced Photoelectrochemical Water Oxidation
Source abstract
Abstract
Band structure engineering of the interface between the semiconductor and the conductive substrate may profoundly influence charge separation and transport for photovoltaic and photoelectrochemical devices. In this work, we found that a reduction-annealing treatment resulted in a diffused junction through enhanced interdiffusion of hematite/FTO at the interface. The activated hematite exhibited higher nanoelectric conductivity that was probed by a PeakForce TUNA AFM method. Furthermore, charge accumulation and recombination via surface states at the interface were dramatically reduced after the reduction-annealing activation, which was confirmed by transient surface photovoltage measurements. The diffused hematite junction promises improved photoelectrochemical performance without the need for a buffer layer.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Iron oxide chemistry and applications · Advanced Photocatalysis Techniques · Mine drainage and remediation techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province, Institute of Surface Micro and Nano Materials, Xuchang University, Xuchang, Henan 461000, P. R. China
Joint Center for Artificial Photosynthesis, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States
Department of Chemistry, Merkert Chemistry Center, Boston College, 2609 Beacon Street, Chestnut Hill, Massachusetts 02467, United States
Funding
Office of Science · National Natural Science Foundation of China · Division of Materials Research · Educational Department of Henan Province · Henan Province
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