journal article·2021-01-27

Room Temperature Wafer-Scale Synthesis of Highly Transparent, Conductive CuS Nanosheet Films via a Simple Sulfur Adsorption-Corrosion Method

John Hong, Byung-Sung Kim, Bo Hou, Sangyeon Pak, Taehun Kim, A-Rang Jang, Yuljae Cho, Sanghyo Lee, Geon-Hyoung An, Jae Eun Jang, Stephen M. Morris, Jung Inn Sohn, SeungNam Cha

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Abstract

The development of highly conductive electrodes with robust mechanical durability and clear transmittance in the visible to IR spectral range is of great importance for future wearable/flexible electronic applications. In particular, low resistivity, robust flexibility, and wide spectral transparency have a significant impact on optoelectronic performance. Herein, we introduce a new class of covellite copper monosulfide (CuS) nanosheet films as a promising candidate for soft transparent conductive electrodes (TCEs). An atmospheric sulfur adsorption-corrosion phenomenon represents a key approach in our work for the achievement of wafer-scale CuS nanosheet films through systematic control of the neat Cu layer thickness ranging from 2 to 10 nm multilayers at room temperature. These nanosheet films provide outstanding conductivity (∼25 Ω sq–1) and high transparency (> 80%) in the visible to infrared region as well as distinct flexibility and long stability under air exposure, yielding a high figure-of-merit (∼60) that is comparable to that of conventional rigid metal oxide material-based TCEs. Our unique room temperature synthesis process delivers high quality CuS nanosheets on any arbitrary substrates in a short time (< 1 min) scale, thus guaranteeing the widespread use of highly producible and scalable device fabrication.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: MXene and MAX Phase Materials · 2D Materials and Applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, United Kingdom

School of Materials Science and Engineering, Kookmin University, Seoul 02707, Republic of Korea

Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea

Department of Electrical Engineering, Semyung University, 65 Semyung-ro, Chungcheongbuk-do 27136, Republic of Korea

University of Michigan − Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Minghang District, Shanghai 200240, China

Department of Energy Engineering, Gyeongnam National University of Science and Technology (GNUST), Jinju 52725, South Korea

Department of Information and Communication Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 49288, Republic of Korea

Division of Physics and Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Republic of Korea

Funding

National Research Foundation of Korea · H2020 Industrial Leadership

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