DataVXACS Applied Materials & InterfacesPaper
journal article·2017-08-23

Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films

Yuanzheng Li, Xinshu Li, Heyu Chen, Jia Shi, Qiuyu Shang, Shuai Zhang, Xiaohui Qiu, Zheng Liu, Qing Zhang, Haiyang Xu, Weizhen Liu, Xinfeng Liu, Yichun Liu

ACS Applied Materials & Interfaces· Volume 9· Issue 33
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Source abstract

Abstract

MoS 2 as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS 2 via atomic-layer-deposited Al 2 O 3 films. The deposited Al 2 O 3 films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS 2 that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS 2 with different thickness of Al 2 O 3, the doped carrier concentration is estimated at ∼2.7 × 10 13 cm –2 based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS 2 as the thicknesses of Al 2 O 3 capping layer increase. Effective control of gas molecules doping in monolayer MoS 2 provides us a valuable insight into the applications of MoS 2 based optical and electrical devices.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China

Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China

National Demonstration Center for Experimental Physics Education, Northeast Normal University, Changchun 130024, China

Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China

Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore

Funding

State Administration of Foreign Experts Affairs · Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · National Research Foundation Singapore · National Natural Science Foundation of China · Chinese Academy of Sciences · Ministry of Education Key Laboratory for UV-emitting Materials and Technology, Northeast Normal University · Jilin Province

References (31)

Show source-provided references
1. 10.1038/ncomms473110.1038/ncomms4731 ↗
2. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
3. 10.1038/nature1859310.1038/nature18593 ↗
4. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
5. 10.1021/nl903868w10.1021/nl903868w ↗
6. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
7. 10.1038/nmat446510.1038/nmat4465 ↗
8. 10.1038/ncomms249810.1038/ncomms2498 ↗
9. 10.1038/ncomms850910.1038/ncomms8509 ↗
10. 10.1021/nn501342910.1021/nn5013429 ↗
11. 10.1002/adma.20160454010.1002/adma.201604540 ↗
12. 10.1021/nn500532f10.1021/nn500532f ↗
13. 10.1038/srep0265710.1038/srep02657 ↗
14. 10.1021/acsami.6b0156810.1021/acsami.6b01568 ↗
15. 10.1021/nn301572c10.1021/nn301572c ↗
16. 10.1021/nl403036h10.1021/nl403036h ↗
17. 10.1002/adma.20150188810.1002/adma.201501888 ↗
18. 10.1039/C6TC03553A10.1039/C6TC03553A ↗
19. 10.1002/adfm.20110211110.1002/adfm.201102111 ↗
20. 10.1039/C4NR04532G10.1039/C4NR04532G ↗
21. 10.1038/nmat367310.1038/nmat3673 ↗
22. 10.1038/srep0186610.1038/srep01866 ↗
23. 10.1103/PhysRevB.85.16140310.1103/PhysRevB.85.161403 ↗
24. 10.1002/smll.20120298210.1002/smll.201202982 ↗
25. 10.1021/nl401117210.1021/nl4011172 ↗
26. 10.1038/nmat350510.1038/nmat3505 ↗
27. 10.1063/1.153991510.1063/1.1539915 ↗
28. 10.1063/1.303689510.1063/1.3036895 ↗
29. 10.1038/nmat119810.1038/nmat1198 ↗
30. 10.1021/nn303973r10.1021/nn303973r ↗
31. 10.1088/0957-4484/24/9/09520210.1088/0957-4484/24/9/095202 ↗