DataVXACS Applied Materials & InterfacesPaper
journal article·2015-01-14Open access

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

Stephan Wirths, Daniela Stange, Maria-Angela Pampillón, Andreas T. Tiedemann, Gregor Mussler, Alfred Fox, Uwe Breuer, Bruno Baert, Enrique San Andrés, Ngoc D. Nguyen, Jean-Michel Hartmann, Zoran Ikonic, Siegfried Mantl, Dan Buca

ACS Applied Materials & Interfaces· Volume 7· Issue 1
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Source abstract

Abstract

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
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Research context

Metals & alloysElectronic materialsMaterials processing

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Jülich, 52425 Jülich, Germany

Departamento Física Aplicada III: Electricidad y Electrónica, Universidad Complutense de Madrid (UCM), 28040 Madrid, Spain

Central Institute for Engineering, Electronics and Analytics (ZEA), Forschungszentrum Jülich, 52425 Jülich, Germany

Department of Physics, Solid State Physics - Interfaces and Nanostructures, Université de Liège, B-4000 Liège, Belgium

Université Grenoble Alpes, 38000 Grenoble, France

LETI, Minatec Campus, CEA, 17 rue des Martyrs, 38054 Grenoble, France

Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

Funding

Bundesministerium für Bildung und Forschung · Ministerio de Economía y Competitividad

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