Ultrathin Solar Absorber Layers of Silver Bismuth Sulfide from Molecular Precursors

Here we present a robust molecular precursor-based approach to synthesize high-quality thin films of silver bismuth sulfide (AgBiS2). Pure-phase cubic AgBiS2 thin films are prepared, which are smooth and dense down to thicknesses less than 40 nm. Comprehensive structural and morphological analysis of the as-prepared films as a function of processing temperature and composition is presented, including X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. The optical properties of the films and their electronic band structure are also presented. The as-prepared films show impressive light absorption properties with absorption coefficients reaching 105 cm–1 for energies above ca. 950 nm. Finally, their photoactivity is demonstrated through photoconductivity measurements on lateral electrodes. The methods outlined herein enable the fabrication of AgBiS2 semiconductor thin films at low processing temperatures (150 °C) with a dense morphology and tunable Ag/Bi composition. Such films provide an excellent platform for the fabrication of AgBiS2-based optoelectronic devices, specifically solar cells.