Doping Versatile n-Type Organic Semiconductors via Room Temperature Solution-Processable Anionic Dopants
Source abstract
Abstract
In this study, we describe a facile solution-processing method to effectively dope versatile n-type organic semiconductors, including fullerene, n-type small molecules, and graphene by commercially available ammonium and phosphonium salts via in situ anion-induced electron transfer. In addition to the Lewis basicity of anions, we unveiled that the ionic binding strength between the cation and anion of the salts is also crucial in modulating the electron transfer strength of the dopants to affect the resulting doping efficiency. Furthermore, combined with the rational design of n-type molecules, an n-doped organic semiconductor is demonstrated to be thermally and environmentally stable. This finding provides a simple and generally applicable method to make highly efficient n-doped conductors which complements the well-established p-doped organics such as PEDOT:PSS for organic electronic applications.
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Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Luminescence and Fluorescent Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195, United States
MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
Department of Physics & Materials Science, City University of Hong Kong, Kowloon, Hong Kong
Funding
Division of Chemistry · Air Force Office of Scientific Research · Office of Naval Research
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