journal article·2014-02-26

Influence of Surface States on the Evaluation of the Flat Band Potential of TiO2

Hao Ge, Hui Tian, Yangen Zhou, Shuyao Wu, Daliang Liu, Xianzhi Fu, Xi-Ming Song, Xicheng Shi, Xuxu Wang, Ning Li

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Abstract

Flat band potential (Vfb) is one of the most important physical parameters to study and understand semiconductor materials. However, the influence of surface states on the evaluating Vfb of titanium oxide (TiO2) and other semiconductor materials through a Mott-Schottky plot is ignored. Our study indicated that the influence of surface states should be introduced into the corresponding equivalent circuit even when the kinetic process did not occur. Ignoring the influence of surface states would lead to an underestimation of the space charge capacitance. Our paper would be beneficial for accurate determination of Vfb of semiconductor materials. We anticipate that this preliminary study will open new perspectives in understanding the semiconductor-electrolyte interface.
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Research context

OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang, 110036, People’s Republic of China

Research Institute of Photocatalysis, Fuzhou University, 523 Gong Ye Road, 350002 Fuzhou, People’s Republic of China

Research Institute of Chemical Defense, Beijing 100083, People’s Republic of China

Department of Applied Chemistry, Harbin Institute of Technology, Harbin 150001, People’s Republic of China

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