journal article·2018-04-18Open access

Indirect X-ray Detectors Based on Inkjet-Printed Photodetectors with a Screen-Printed Scintillator Layer

Juliana Oliveira, Vitor Correia, Enrico Sowade, Ikerne Etxebarria, Raul D. Rodriguez, Kalyan Y. Mitra, Reinhard R. Baumann, Senentxu Lanceros-Mendez

ACS Applied Materials & Interfaces· Volume 10· Issue 15

Abstract

Organic photodetectors (PDs) based on printing technologies will allow to expand the current field of PD applications toward large-area and flexible applications in areas such as medical imaging, security, and quality control, among others. Inkjet printing is a powerful digital tool for the deposition of smart and functional materials on various substrates, allowing the development of electronic devices such as PDs on various substrates. In this work, inkjet-printed PD arrays, based on the organic thin-film transistor architecture, have been developed and applied for the indirect detection of X-ray radiation using a scintillator ink as an X-ray absorber. The >90% increase of the photocurrent of the PDs under X-ray radiation, from about 53 nA without the scintillator film to about 102 nA with the scintillator located on top of the PD, proves the suitability of the developed printed device for X-ray detection applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: CCD and CMOS Imaging Sensors · Radiation Detection and Scintillator Technologies · Luminescence and Fluorescent Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Centro de Física, Universidade do Minho, 4710-057 Braga, Portugal

Algoritmi Research Center, Universidade do Minho, Campus de Azurém, 4800-058 Guimarães, Portugal

BCMaterials, Basque Center for Materials, Applications and Nanostructures, UPV/EHU Science Park, 48940 Leioa, Spain

Department Printed Functionalities, Fraunhofer Institute for Electronic Nano Systems (ENAS), 09126 Chemnitz, Germany

IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Spain

Funding

European Regional Development Fund · Ministerio de Economía y Competitividad · Deutsche Forschungsgemeinschaft · Fundação para a Ciência e a Tecnologia · Ekonomiaren Garapen eta Lehiakortasun Saila, Eusko Jaurlaritza

References (59)

Show source-provided references
1. 10.1109/jsen.2003.81465110.1109/jsen.2003.814651 ↗
2. 10.1016/j.nima.2013.05.17410.1016/j.nima.2013.05.174 ↗
3. 10.2147/rmi.s5004510.2147/rmi.s50045 ↗
4. 10.1007/s00330-005-2734-910.1007/s00330-005-2734-9 ↗
5. 10.1109/tmi.2017.270606510.1109/tmi.2017.2706065 ↗
6. 10.2217/nnm.14.17110.2217/nnm.14.171 ↗
7. 10.1039/b715143h10.1039/b715143h ↗
8. 10.1021/acsnano.6b0510910.1021/acsnano.6b05109 ↗
9. 10.1002/smll.20170182210.1002/smll.201701822 ↗
10. 10.1021/nl500443j10.1021/nl500443j ↗
11. 10.1002/lpor.20160006510.1002/lpor.201600065 ↗
12. 10.1088/0268-1242/30/10/10400610.1088/0268-1242/30/10/104006 ↗
13. Wegrzecka I. · Opto-Electron. Rev. · 1997 · 2 · 137
14. 10.1002/adma.20120497910.1002/adma.201204979 ↗
15. 10.1038/nnano.2014.21510.1038/nnano.2014.215 ↗
16. 10.1021/ac802732310.1021/ac8027323 ↗
17. 10.1038/ncomms1306310.1038/ncomms13063 ↗
18. 10.1038/nnano.2010.7810.1038/nnano.2010.78 ↗
19. 10.1016/j.mee.2012.03.03210.1016/j.mee.2012.03.032 ↗
20. Piqué A. · 2002
21. 10.1002/adma.20090114110.1002/adma.200901141 ↗
22. 10.1021/ie503636c10.1021/ie503636c ↗
23. 10.1016/j.tsf.2011.08.00410.1016/j.tsf.2011.08.004 ↗
24. 10.1021/am502212310.1021/am5022123 ↗
25. 10.1021/nl803386y10.1021/nl803386y ↗
26. Pierre, A.; Arias, A. C. In High-detectivity printed organic photodiodes for large area flexible imagers,Technical Digest—International Electron Devices Meeting, IEDM, 2017; pp 32.4.1–32.4.4.10.1109/IEDM.2016.7838528 ↗
27. 10.1016/j.jmapro.2017.11.01610.1016/j.jmapro.2017.11.016 ↗
28. 10.1002/app.4607910.1002/app.46079 ↗
29. 10.1038/nphoton.2015.21610.1038/nphoton.2015.216 ↗
30. 10.1016/j.solmat.2009.07.01510.1016/j.solmat.2009.07.015 ↗
31. Sahu, S.; Pal, A. J. In Photodetectors based on organic semiconductors: Optimization of device architectures,Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, 2007; pp 560–562.10.1109/IWPSD.2007.4472576 ↗
32. 10.1002/adma.20150223810.1002/adma.201502238 ↗
33. 10.1109/jsen.2009.202652010.1109/jsen.2009.2026520 ↗
34. 10.1016/j.compositesb.2016.02.01710.1016/j.compositesb.2016.02.017 ↗
35. 10.1007/s00339-015-9435-210.1007/s00339-015-9435-2 ↗
36. 10.1016/j.compositesb.2017.09.03110.1016/j.compositesb.2017.09.031 ↗
37. 10.1063/1.358936610.1063/1.3589366 ↗
38. 10.1088/0957-4484/27/47/47550110.1088/0957-4484/27/47/475501 ↗
39. 10.1021/nn400458310.1021/nn4004583 ↗
40. 10.1039/c2tc00245k10.1039/c2tc00245k ↗
41. Gu M. · Spectrosc. Spectral Anal. · 2010 · 30 · 603
42. 10.1126/science.280.5370.174110.1126/science.280.5370.1741 ↗
43. 10.1038/s41467-017-01047-910.1038/s41467-017-01047-9 ↗
44. 10.1016/j.elspec.2009.03.00210.1016/j.elspec.2009.03.002 ↗
45. 10.1016/j.cplett.2005.08.00410.1016/j.cplett.2005.08.004 ↗
46. 10.1021/jp960608n10.1021/jp960608n ↗
47. 10.1118/1.59883110.1118/1.598831 ↗
48. 10.1088/0957-0233/17/4/r0110.1088/0957-0233/17/4/r01 ↗
49. Coling D. · 2001 · 14
50. Ploem J. S. · 1987 · 10
51. 10.1016/s0168-9002(03)01031-310.1016/s0168-9002(03)01031-3 ↗
52. Kubitscheck U. · 201310.1002/9783527671595 ↗
53. 10.1021/acsami.7b0043510.1021/acsami.7b00435 ↗
54. 10.1016/j.orgel.2015.12.01810.1016/j.orgel.2015.12.018 ↗
55. 10.1007/s11664-014-3407-810.1007/s11664-014-3407-8 ↗
56. 10.1016/j.radmeas.2009.12.02510.1016/j.radmeas.2009.12.025 ↗
57. 10.1007/s00339-011-6640-510.1007/s00339-011-6640-5 ↗
58. 10.1016/j.jlumin.2014.02.01710.1016/j.jlumin.2014.02.017 ↗
59. 10.1063/1.499975910.1063/1.4999759 ↗