journal article·2017-05-31

Impact of Film Thickness of Ultrathin Dip-Coated Compact TiO2 Layers on the Performance of Mesoscopic Perovskite Solar Cells

Muhammad Talha Masood, Christian Weinberger, Jawad Sarfraz, Emil Rosqvist, Simon Sandén, Oskar J. Sandberg, Paola Vivo, Ghufran Hashmi, Peter D. Lund, Ronald Österbacka, Jan-Henrik Smått

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Abstract

Uniform and pinhole-free electron-selective TiO 2 layers are of utmost importance for efficient perovskite solar cells. Here we used a scalable and low-cost dip-coating method to prepare uniform and ultrathin (5–50 nm) compact TiO 2 films on fluorine-doped tin oxide (FTO) glass substrates. The thickness of the film was tuned by changing the TiCl 4 precursor concentration. The formed TiO 2 follows the texture of the underlying FTO substrates, but at higher TiCl 4 concentrations, the surface roughness is substantially decreased. This change occurs at a film thickness close to 20–30 nm. A similar TiCl 4 concentration is needed to produce crystalline TiO 2 films. Furthermore, below this film thickness, the underlying FTO might be exposed resulting in pinholes in the compact TiO 2 layer. When integrated into mesoscopic perovskite solar cells there appears to be a similar critical compact TiO 2 layer thickness above which the devices perform more optimally. The power conversion efficiency was improved by more than 50% (from 5.5% to ∼8.6%) when inserting a compact TiO 2 layer. Devices without or with very thin compact TiO 2 layers display J – V curves with an “s-shaped” feature in the negative voltage range, which could be attributed to immobilized negative ions at the electron-extracting interface. A strong correlation between the magnitude of the s-shaped feature and the exposed FTO seen in the X-ray photoelectron spectroscopy measurements indicates that the s-shape is related to pinholes in the compact TiO 2 layer when it is too thin.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Engineering, School of Chemical & Materials Engineering, National University of Science & Technology (NUST), H-12 sector, 44000 Islamabad, Pakistan

Laboratory of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, 33101 Tampere, Finland

New Energy Technologies Group, Department of Applied Physics, Aalto University and School of Science, P.O. Box 15100, 00076 Aalto (Espoo), Finland

Funding

Luonnontieteiden ja Tekniikan Tutkimuksen Toimikunta · Deutsche Forschungsgemeinschaft · National University of Sciences and Technology · Magnus Ehrnroothin S??ti?

References (36)

Show source-provided references
1. 10.1021/ja809598r10.1021/ja809598r ↗
2. 10.1038/srep0059110.1038/srep00591 ↗
3. Best Research Cell-Efficiencies, National Renewable Energy Laboratory (NREL), Apr 20 2016, https://www.nrel.gov/pv/assets/images/efficiency-chart.png.
4. 10.1039/C5EE03874J10.1039/C5EE03874J ↗
5. 10.1016/j.mattod.2014.07.00710.1016/j.mattod.2014.07.007 ↗
6. 10.1016/j.solmat.2016.06.02510.1016/j.solmat.2016.06.025 ↗
7. 10.1016/j.orgel.2016.10.03510.1016/j.orgel.2016.10.035 ↗
8. 10.1002/aenm.20150106610.1002/aenm.201501066 ↗
9. 10.1126/science.122860410.1126/science.1228604 ↗
10. 10.1038/nature1234010.1038/nature12340 ↗
11. 10.1016/j.jpowsour.2017.01.02410.1016/j.jpowsour.2017.01.024 ↗
12. 10.1016/j.jallcom.2016.09.03810.1016/j.jallcom.2016.09.038 ↗
13. 10.1016/j.apsusc.2016.06.17110.1016/j.apsusc.2016.06.171 ↗
14. 10.7567/APEX.7.05230110.7567/APEX.7.052301 ↗
15. 10.1038/srep1609810.1038/srep16098 ↗
16. 10.1016/j.mssp.2014.07.03910.1016/j.mssp.2014.07.039 ↗
17. 10.1021/acs.jpcc.5b0054110.1021/acs.jpcc.5b00541 ↗
18. 10.1039/C6RA16865E10.1039/C6RA16865E ↗
19. 10.1039/C5NR05563F10.1039/C5NR05563F ↗
20. 10.1039/C6TA08783C10.1039/C6TA08783C ↗
21. 10.1021/jz500059v10.1021/jz500059v ↗
22. 10.1021/nn502982810.1021/nn5029828 ↗
23. 10.1021/acsami.6b0270110.1021/acsami.6b02701 ↗
24. 10.1021/am400866s10.1021/am400866s ↗
25. 10.1021/jp410361410.1021/jp4103614 ↗
26. 10.1021/am503728d10.1021/am503728d ↗
27. 10.1016/j.cap.2015.01.02810.1016/j.cap.2015.01.028 ↗
28. 10.1016/j.orgel.2016.11.01710.1016/j.orgel.2016.11.017 ↗
29. Whitehouse D. J. · 201010.1201/b10415 ↗
30. Leach R. · 201310.1007/978-3-642-36458-7 ↗
31. Lide D. R. · 2005
32. 10.1007/s00216005041610.1007/s002160050416 ↗
33. 10.1103/PhysRevApplied.5.04400510.1103/PhysRevApplied.5.044005 ↗
34. 10.1021/jz502039k10.1021/jz502039k ↗
35. 10.1002/pssr.20140929210.1002/pssr.201409292 ↗
36. 10.1103/PhysRevApplied.1.02400310.1103/PhysRevApplied.1.024003 ↗