journal article·2021-06-09

Crystal-Plane Controlled Spontaneous Polarization of Inorganic Perovskite toward Boosting Triboelectric Surface Charge Density

Xueping Yu, Zhongzhe Liu, Xiya Yang, Yudi Wang, Jihua Zhang, Jialong Duan, Liming Liu, Qunwei Tang

ACS Applied Materials & Interfaces· Volume 13· Issue 22
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Abstract

Triboelectric generators (TENGs) have been extensively studied as a new energy for low cost and the universally applicable prospect. Meanwhile, perovskites have been applied in TENG and show a good performance in view of high carrier mobility, long life and dielectric properties. The asymmetry structure of the orthogonal phase CsPbBr3 perovskite endows it with ferroelectric property and induces the misalignment of the positive and negative charge centers. Herein, the surface energy of halogen doped inorganic CsPbX3 (X = Cl–, Br–) perovskites are theoretically investigated by density functional theory (DFT) calculation, the crystal polarizability of pristine CsPbBr3 is improved from 0.47 Ry a.u. to 0.52 Ry a.u. (CsPbCl3), indicating the polarizability of CsPbCl3 is higher than CsPbBr3. In addition, the build-in electric field (Ebuild-in) of perovskite materials can be enhanced by the spontaneous polarization and the aligned dipoles in the Ebuild-in could further improve the tribo-electrostatic electric field by retaining more triboelectric surface charges. In the end, CsPbCl3 achieved a power of 3.06 W m–2 compared to the power of 1.34 W m–2 of CsPbBr3. This work focuses on the regulation of crystal planes using spontaneous polarization of perovskite toward achieving a high built-in electric field for enhancing triboelectric surface charge density.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Perovskite Materials and Applications · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Information Science and Technology, Jinan University, Guangzhou 510632, PR China

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan 610054, PR China

Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan, Guangdong 528402, PR China

Funding

Ministry of Education of the People's Republic of China · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Postdoctoral Research Foundation of China · Guangdong Basic and Applied Basic Research Foundation · Zhongshan Innovative Research Team Program

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