journal article·2016-02-24

Optoelectronic Properties of Solution Grown ZnO n-p or p-n Core–Shell Nanowire Arrays

Ken C. Pradel, Yong Ding, Wenzhuo Wu, Yoshio Bando, Naoki Fukata, Zhong Lin Wang

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Abstract

Sb doped ZnO nanowires grown using the low-temperature hydrothermal method have the longest reported p-type stability of over 18 months. Using this growth system, bulk homojunction films of core-shell ZnO nanowires were synthesized with either n or p-type cores and the oppositely doped shell. Extensive transmission electron microscopy (TEM) characterization showed that the nanowires remain single crystalline, and the previously reported signs of doping remain intact. The electronic properties of these films were measured, and ultraviolet photodetection was observed. This growth technique could serve as the basis for other optoelectronic devices based on ZnO such as light emitting diodes and photovoltaics.
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Research context

OpenAlex topics: ZnO doping and properties · Perovskite Materials and Applications · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Funding

Ministry of Education, Culture, Sports, Science, and Technology · Basic Energy Sciences · National Science Foundation

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