journal article·2016-09-14

Superacid Passivation of Crystalline Silicon Surfaces

James Bullock, Daisuke Kiriya, Nicholas Grant, Angelica Azcatl, Mark Hettick, Teng Kho, Pheng Phang, Hang C. Sio, Di Yan, Daniel Macdonald, Manuel A. Quevedo-Lopez, Robert M. Wallace, Andres Cuevas, Ali Javey

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Abstract

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.
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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Research School of Engineering, The Australian National University (ANU), Canberra, Australian Capital Territory 2602, Australia

Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, Texas 75080, United States

Funding

Basic Energy Sciences · Australian Renewable Energy Agency · Bay Area Photovoltaic Consortium

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