Systematic Reliability Study of Top-Gate p- and n-Channel Organic Field-Effect Transistors
Source abstract
Abstract
We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Organic Electronics and Photovoltaics · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, United States
Interface Control Research Center, Future Convergence Research Technology Division, Korea Institute of Science and Technology (KIST), Seoul 136-791, South Korea
Solvay SA, rue de Ransbeek 310, 1120 Brussels, Belgium
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, South Korea
Center for Organic Photonics and Electronics (COPE), Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, United States
Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
References (43)
Show source-provided references
1. Giri G. · Nature · 2011 · 480 · 50410.1038/nature10683 ↗
2. Yan H. · Nature · 2009 · 457 · 67910.1038/nature07727 ↗
3. Hamilton R. · Adv. Mater. · 2009 · 21 · 116610.1002/adma.200801725 ↗
4. Smith J. · Adv. Mater. · 2012 · 24 · 244110.1002/adma.201200088 ↗
5. Hwang D. K. · Adv. Mater. · 2011 · 23 · 129310.1002/adma.201004278 ↗
6. Hwang D. K. · J. Mater. Chem. · 2012 · 22 · 553110.1039/c2jm16487f ↗
7. Zhou L. S. · Appl. Phys. Lett. · 2006 · 88 · 08350210.1063/1.2178213 ↗
8. Sekitani T. · Adv. Mater. · 2010 · 22 · 222810.1002/adma.200904054 ↗
9. Sekitani T. · Nat. Mater. · 2009 · 8 · 49410.1038/nmat2459 ↗
10. Gelinck G. · Adv. Mater. · 2010 · 22 · 377810.1002/adma.200903559 ↗
11. Klauk H. · Nature · 2007 · 445 · 74510.1038/nature05533 ↗
12. Zhang X. H. · Appl. Phys. Lett. · 2009 · 94 · 04331210.1063/1.3077025 ↗
13. Someya T. · Adv. Mater. · 2010 · 22 · 379910.1002/adma.200902760 ↗
14. Sekitani T. · Science · 2009 · 326 · 151610.1126/science.1179963 ↗
15. Kobayashi N. · Chem. Mater. · 2009 · 21 · 55210.1021/cm802826m ↗
16. Zschieschang U. · Adv. Mater. · 2010 · 22 · 98210.1002/adma.200902740 ↗
17. Zhao Y. · Adv. Mater. · 2011 · 23 · 244810.1002/adma.201004588 ↗
18. Glowacki E. D. · Adv. Mater. · 2013 · 25 · 156310.1002/adma.201204039 ↗
19. Cho H. · ACS Appl. Mater. Interfaces · 2013 · 5 · 385510.1021/am4005368 ↗
20. Yokota T. · Adv. Mater. · 2013 · 25 · 363910.1002/adma.201300941 ↗
21. Hwang D. K. · Adv. Mater. · 2012 · 24 · 444510.1002/adma.201201689 ↗
22. Lee W. H. · Adv. Funct. Mater. · 2012 · 22 · 26710.1002/adfm.201101159 ↗
23. Sirringhaus H. · Adv. Mater. · 2009 · 21 · 385910.1002/adma.200901136 ↗
24. De Angelis F. · Chem. Phys. Lett. · 2009 · 468 · 19310.1016/j.cplett.2008.12.048 ↗
25. Han S. H. · Appl. Phys. Lett. · 2006 · 88 · 07351910.1063/1.2174876 ↗
26. Jung H. · Appl. Phys. Lett. · 2008 · 92 · 16350410.1063/1.2909717 ↗
27. Qiu Y. · Appl. Phys. Lett. · 2003 · 83 · 164410.1063/1.1604193 ↗
28. Li D. W. · Appl. Phys. Lett. · 2005 · 86 · 04210510.1063/1.1852708 ↗
29. Jung T. · Appl. Phys. Lett. · 2005 · 87 · 18210910.1063/1.2117629 ↗
30. Hwang D. K. · Org. Electron. · 2011 · 12 · 110810.1016/j.orgel.2011.04.002 ↗
31. Zhou Y. · Science · 2012 · 336 · 32710.1126/science.1218829 ↗
32. Griffith O. L. · J. Am. Chem. Soc. · 2010 · 132 · 58010.1021/ja906917r ↗
33. Park S. K. · Org. Electron. · 2009 · 10 · 48610.1016/j.orgel.2009.02.007 ↗
34. Maliakal A. · Chem. Mater. · 2004 · 16 · 498010.1021/cm049060k ↗
35. Klauk H. · 200610.1002/3527608753 ↗
36. Lussem B. · Phys. Status Solidi A · 2013 · 210 · 910.1002/pssa.201228310 ↗
37. Tiwari S. P. · Org. Electron. · 2010 · 11 · 86010.1016/j.orgel.2010.01.029 ↗
38. Di Pietro R. · J. Am. Chem. Soc. · 2012 · 134 · 1487710.1021/ja304198e ↗
39. Lee K. · Adv. Mater. · 2010 · 22 · 326010.1002/adma.201000722 ↗
40. Lee J. · Phys. Rev. B · 2012 · 85 · 04520610.1103/PhysRevB.85.045206 ↗
41. Sakanoue T. · Nat. Mater. · 2010 · 9 · 73610.1038/nmat2825 ↗
42. Caironi M. · Adv. Funct. Mater. · 2011 · 21 · 337110.1002/adfm.201100592 ↗
43. 10.1021/am404460j10.1021/am404460j ↗