journal article·2018-05-09

Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors

Shujun Zhou, Qingxin Tang, Hongkun Tian, Xiaoli Zhao, Yanhong Tong, Stephen Barlow, Seth R. Marder, Yichun Liu

ACS Applied Materials & Interfaces· Volume 10· Issue 18
Publisher page

Abstract

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Organic Light-Emitting Diodes Research · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China

State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, United States

Funding

Georgia Power · State Administration of Foreign Experts Affairs · Ministry of Education of the People's Republic of China · National Natural Science Foundation of China

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