Enhancement of the Electrical Properties in BaTiO3/PbZr0.52Ti0.48O3 Ferroelectric Superlattices
Source abstract
Abstract
In this study, BaTiO3/Pb(Zr0.52Ti0.48)O3 (BTO/PZT) ferroelectric superlattices have been grown on the Nb-doped SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition, and their electrical properties were investigated in detail. The leakage current was reduced significantly in the BTO/PZT superlattices, and the conduction mechanism could be interpreted as the bulk-limited mechanism. In addition, a more symmetric hysteresis loop was observed in the BTO/PZT superlattices compared with the pure PZT and BTO films. The BTO/PZT superlattices with the modulation thickness of 9.8 nm showed remarkably improved dielectric properties with dielectric constant and loss of 684 and 0.02, respectively, measured at the frequency of 10 kHz. Based on these experimental results, it can be considered that the BTO/PZT interfaces play a very important role for the enhanced electrical properties of the BTO/PZT superlattices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), 72 Wenhua Road, Shenyang 110016, China
Funding
National Natural Science Foundation of China · Chinese Academy of Sciences
References (47)
Show source-provided references
1. 10.1126/science.112956410.1126/science.1129564 ↗
2. 10.1126/science.276.5310.23810.1126/science.276.5310.238 ↗
3. 10.1103/RevModPhys.77.108310.1103/RevModPhys.77.1083 ↗
4. 10.1023/B:JECR.0000015661.81386.e610.1023/B:JECR.0000015661.81386.e6 ↗
5. 10.1063/1.218859110.1063/1.2188591 ↗
6. 10.1063/1.293887610.1063/1.2938876 ↗
7. 10.1063/1.273791210.1063/1.2737912 ↗
8. 10.1002/adma.20070096510.1002/adma.200700965 ↗
9. 10.1146/annurev-conmatphys-062910-14044510.1146/annurev-conmatphys-062910-140445 ↗
10. 10.1088/0953-8984/26/19/19320110.1088/0953-8984/26/19/193201 ↗
11. 10.1126/science.113030610.1126/science.1130306 ↗
12. 10.1038/nature0326110.1038/nature03261 ↗
13. 10.1063/1.490193110.1063/1.4901931 ↗
14. 10.1063/1.278940110.1063/1.2789401 ↗
15. 10.1103/PhysRevLett.109.16760110.1103/PhysRevLett.109.167601 ↗
16. 10.1103/PhysRevB.79.17411310.1103/PhysRevB.79.174113 ↗
17. 10.1103/PhysRevB.82.09411510.1103/PhysRevB.82.094115 ↗
18. 10.1557/mrs.2013.26310.1557/mrs.2013.263 ↗
19. 10.1063/1.11283710.1063/1.112837 ↗
20. 10.1103/PhysRevB.91.05441910.1103/PhysRevB.91.054419 ↗
21. 10.1021/cm500381g10.1021/cm500381g ↗
22. 10.1103/PhysRevB.61.R644710.1103/PhysRevB.61.R6447 ↗
23. 10.1016/j.actamat.2013.10.02710.1016/j.actamat.2013.10.027 ↗
24. 10.1021/am500112910.1021/am5001129 ↗
25. 10.1016/j.jallcom.2015.05.04710.1016/j.jallcom.2015.05.047 ↗
26. 10.1063/1.366354310.1063/1.3663543 ↗
27. 10.1021/nl302032u10.1021/nl302032u ↗
28. 10.1002/adma.20140191710.1002/adma.201401917 ↗
29. 10.1209/0295-5075/108/6701110.1209/0295-5075/108/67011 ↗
30. Pintilie L. · J. Optoelectron. Adv. Mater. · 2009 · 11 · 215
31. 10.1063/1.489377810.1063/1.4893778 ↗
32. 10.1063/1.482164310.1063/1.4821643 ↗
33. 10.1063/1.352821010.1063/1.3528210 ↗
34. 10.1063/1.149896610.1063/1.1498966 ↗
35. 10.1063/1.486240810.1063/1.4862408 ↗
36. 10.1021/nl300371710.1021/nl3003717 ↗
37. 10.1063/1.470417810.1063/1.4704178 ↗
38. 10.1103/PhysRevLett.94.04760110.1103/PhysRevLett.94.047601 ↗
39. 10.1063/1.476770210.1063/1.4767702 ↗
40. 10.1063/1.345734810.1063/1.3457348 ↗
41. 10.1016/j.jcrysgro.2005.03.07810.1016/j.jcrysgro.2005.03.078 ↗
42. 10.1063/1.129069110.1063/1.1290691 ↗
43. 10.1063/1.139123310.1063/1.1391233 ↗
44. 10.1103/PhysRevLett.104.18760110.1103/PhysRevLett.104.187601 ↗
45. 10.1088/0953-8984/17/44/00710.1088/0953-8984/17/44/007 ↗
46. 10.1063/1.488555110.1063/1.4885551 ↗
47. 10.1063/1.132500510.1063/1.1325005 ↗