Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces
Source abstract
Abstract
Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109, United States
Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, Ohio 45433, United States
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States
Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
Funding
National Science Foundation · Office of Naval Research
References (41)
Show source-provided references
1. 10.1021/cr900150b10.1021/cr900150b ↗
2. 10.1002/cphc.20140275710.1002/cphc.201402757 ↗
3. 10.1039/b909902f10.1039/b909902f ↗
4. 10.1002/smll.20150135010.1002/smll.201501350 ↗
5. 10.1021/cr050966z10.1021/cr050966z ↗
6. 10.1021/cm102419z10.1021/cm102419z ↗
7. 10.1021/ar990114j10.1021/ar990114j ↗
8. 10.1002/adma.20120537110.1002/adma.201205371 ↗
9. 10.1021/am406046810.1021/am4060468 ↗
10. 10.1002/adma.20120008810.1002/adma.201200088 ↗
11. 10.1002/adma.20080172510.1002/adma.200801725 ↗
12. 10.1063/1.493031010.1063/1.4930310 ↗
13. 10.1063/1.270989410.1063/1.2709894 ↗
14. 10.1021/cm902929b10.1021/cm902929b ↗
15. 10.1063/1.492219410.1063/1.4922194 ↗
16. 10.1021/am508723a10.1021/am508723a ↗
17. 10.1557/mrc.2015.2110.1557/mrc.2015.21 ↗
18. 10.1002/adma.20160312610.1002/adma.201603126 ↗
19. 10.1109/55.64408510.1109/55.644085 ↗
20. 10.1038/nature0337610.1038/nature03376 ↗
21. 10.1021/acsami.5b0274710.1021/acsami.5b02747 ↗
22. 10.1088/0960-1317/14/1/01210.1088/0960-1317/14/1/012 ↗
23. 10.1002/anie.20140054610.1002/anie.201400546 ↗
24. 10.1039/c3cs35495d10.1039/c3cs35495d ↗
25. 10.1007/BF0122967610.1007/BF01229676 ↗
26. Hansen, F. K.DROPimage Standard (Rame-Hart). rame-hart.
27. 10.1039/c2jm33974a10.1039/c2jm33974a ↗
28. 10.1002/adfm.20140021910.1002/adfm.201400219 ↗
29. 10.1063/1.493031010.1063/1.4930310 ↗
30. 10.1063/1.489423810.1063/1.4894238 ↗
31. 10.1103/PhysRevB.81.03532710.1103/PhysRevB.81.035327 ↗
32. 10.1063/1.495528210.1063/1.4955282 ↗
33. 10.1038/nphoton.2014.13410.1038/nphoton.2014.134 ↗
34. 10.1126/science.aad181810.1126/science.aad1818 ↗
35. 10.1038/nmat391110.1038/nmat3911 ↗
36. 10.1038/ncomms972410.1038/ncomms9724 ↗
37. 10.1038/nphys327710.1038/nphys3277 ↗
38. 10.1126/sciadv.160193510.1126/sciadv.1601935 ↗
39. 10.1021/acs.jpclett.5b0166910.1021/acs.jpclett.5b01669 ↗
40. 10.1038/ncomms838310.1038/ncomms8383 ↗
41. 10.1038/ncomms1090810.1038/ncomms10908 ↗