journal article·2018-02-14Open access

Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

Daniel M. Balazs, Nisrina Rizkia, Hong-Hua Fang, Dmitry N. Dirin, Jamo Momand, Bart J. Kooi, Maksym V. Kovalenko, Maria Antonietta Loi

Abstract

Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747AG Groningen, Netherlands

Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich 8093, Switzerland

Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf 8600, Switzerland

Funding

Kommission f?r Technologie und Innovation · H2020 European Research Council

References (37)

Show source-provided references
1. 10.1038/nnano.2015.24710.1038/nnano.2015.247 ↗
2. 10.1038/nmat480010.1038/nmat4800 ↗
3. 10.1021/nl504582d10.1021/nl504582d ↗
4. 10.1002/adfm.20100199910.1002/adfm.201001999 ↗
5. 10.1002/adma.20170176410.1002/adma.201701764 ↗
6. 10.1002/adma.20120504110.1002/adma.201205041 ↗
7. 10.1021/acsnano.5b0454710.1021/acsnano.5b04547 ↗
8. 10.1039/C6EE01577H10.1039/C6EE01577H ↗
9. 10.1021/ja500628810.1021/ja5006288 ↗
10. 10.1126/science.126050110.1126/science.1260501 ↗
11. 10.1038/nature2104110.1038/nature21041 ↗
12. 10.1126/science.117052410.1126/science.1170524 ↗
13. 10.1021/nl202578g10.1021/nl202578g ↗
14. 10.1021/nn502470v10.1021/nn502470v ↗
15. 10.1021/nn503569p10.1021/nn503569p ↗
16. 10.1021/jz502092x10.1021/jz502092x ↗
17. 10.1002/aenm.20170204910.1002/aenm.201702049 ↗
18. 10.1021/acs.chemmater.5b0079310.1021/acs.chemmater.5b00793 ↗
19. 10.1021/jacs.7b0132710.1021/jacs.7b01327 ↗
20. 10.1103/PhysRevB.47.456910.1103/PhysRevB.47.4569 ↗
21. 10.1063/1.200173710.1063/1.2001737 ↗
22. 10.1002/adma.20140449510.1002/adma.201404495 ↗
23. 10.1002/aelm.20150046710.1002/aelm.201500467 ↗
24. 10.1039/C4TA04785K10.1039/C4TA04785K ↗
25. 10.1126/sciadv.aao155810.1126/sciadv.aao1558 ↗
26. 10.1021/acsami.7b0286710.1021/acsami.7b02867 ↗
27. 10.1021/acs.nanolett.5b0327110.1021/acs.nanolett.5b03271 ↗
28. 10.1002/adma.20120282510.1002/adma.201202825 ↗
29. 10.1021/nl502491d10.1021/nl502491d ↗
30. 10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W ↗
31. 10.1021/nl073217110.1021/nl0732171 ↗
32. 10.1021/nn500897c10.1021/nn500897c ↗
33. 10.1038/ncomms1525710.1038/ncomms15257 ↗
34. 10.1002/adfm.20140149310.1002/adfm.201401493 ↗
35. 10.1063/1.486921610.1063/1.4869216 ↗
36. 10.1002/adma.20030539510.1002/adma.200305395 ↗
37. Sze S. M. · 2007