Microfabrication and Integration of Diazonium-Based Aromatic Molecular Junctions

Microfabrication techniques common in commercial semiconductor manufacturing were used to produce carbon/nitroazobenzene/Cu/Au molecular junctions with a range of areas from 3×3 to 400×400 μm, starting with 100-mm-diameter silicon wafers. The approach exhibited high yield (90-100%) and excellent reproducibility of the current density (relative standard deviation of typically 15%) and 32 devices on a chip. Electron-beam-deposited carbon films are introduced as substrates and may be applied at the full wafer level before dicing and electrochemical deposition of the molecular layer. The current scaled with the device area over a factor of >600, and the current density was quantitatively consistent with structurally similar molecular junctions made by other techniques. The current densities were weakly dependent on temperature over the range of 100-390 K, and maximum current densities above 400 A/cm2 were observed without breakdown. To simulate processing and operation conditions, the junction stability was tested at elevated temperatures. The JV curves of microfabricated junctions were unchanged after 22 h at 100 °C. A ∼50% increase in the current density was observed after 20 h at 150 °C but then remained constant for an additional 24 h. Parallel fabrication, thermal stability, and high yield are required for practical applications of molecular electronics, and the reported results provide important steps toward integration of molecular electronic devices with commercial processes and devices.