Controlling the Formation of Phospholipid Monolayer, Bilayer, and Intact Vesicle Layer on Graphene
Source abstract
Abstract
Exciting progress has been made in the use of graphene for bio- and chemical sensing applications. In this regard, interfacing lipid membranes with graphene provides a high-sealing interface that is resistant to nonspecific protein adsorption and suitable for measuring biomembrane-associated interactions. However, a controllable method to form well-defined lipid bilayer coatings remains elusive, and there are varying results in the literature. Herein, we demonstrate how design strategies based on molecular self-assembly and surface chemistry can be employed to coat graphene surface with different classes of lipid membrane architectures. We characterize the self-assembly of lipid membranes on CVD-graphene using quartz crystal microbalance with dissipation, field-effect transistor, and Raman spectroscopy. By employing the solvent-assisted lipid bilayer (SALB) method, a lipid monolayer and bilayer were formed on pristine and oxygen-plasma-treated CVD-graphene, respectively. On these surfaces, vesicle fusion method resulted in formation of a lipid monolayer and intact vesicle layer, respectively. Collectively, these findings provide the basis for improved surface functionalization strategies on graphene toward bioelectronic applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene and Nanomaterials Applications · Advanced biosensing and bioanalysis techniques · Electrochemical sensors and biosensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Research and Development Center, Park Systems, Suwon 443-270, South Korea
Advanced Institute of Convergence Technology, Seoul National University, Suwon 443-270, South Korea
School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 Singapore
Funding
National Research Foundation-Prime Minister's office, Republic of Singapore
References (34)
Show source-provided references
1. 10.1002/smll.20100200910.1002/smll.201002009 ↗
2. 10.1021/tx200339h10.1021/tx200339h ↗
3. 10.1002/elan.20120010410.1002/elan.201200104 ↗
4. 10.1038/am.2013.1310.1038/am.2013.13 ↗
5. 10.1021/nn501376z10.1021/nn501376z ↗
6. 10.1021/ja025928110.1021/ja0259281 ↗
7. 10.1021/la025772i10.1021/la025772i ↗
8. 10.1039/c0sm01212b10.1039/c0sm01212b ↗
9. 10.1038/nprot.2010.6510.1038/nprot.2010.65 ↗
10. 10.1263/jbb.102.2810.1263/jbb.102.28 ↗
11. 10.1021/nn102258210.1021/nn1022582 ↗
12. 10.1038/ncomms359110.1038/ncomms3591 ↗
13. 10.1016/S0006-3495(98)74057-310.1016/S0006-3495(98)74057-3 ↗
14. 10.1021/la802726u10.1021/la802726u ↗
15. 10.1021/la026392010.1021/la0263920 ↗
16. 10.1016/j.tsf.2005.08.18410.1016/j.tsf.2005.08.184 ↗
17. 10.1021/la104348f10.1021/la104348f ↗
18. 10.1021/la401799210.1021/la4017992 ↗
19. 10.1021/la801080f10.1021/la801080f ↗
20. 10.1529/biophysj.105.06143210.1529/biophysj.105.061432 ↗
21. 10.1021/la404581d10.1021/la404581d ↗
22. 10.1021/la501534f10.1021/la501534f ↗
23. 10.1021/la504849710.1021/la5048497 ↗
24. 10.1021/am507651h10.1021/am507651h ↗
25. 10.1103/PhysRevB.79.23544010.1103/PhysRevB.79.235440 ↗
26. 10.1016/0005-2736(91)90295-J10.1016/0005-2736(91)90295-J ↗
27. 10.1039/a703137h10.1039/a703137h ↗
28. 10.1038/nnano.2013.4610.1038/nnano.2013.46 ↗
29. 10.1038/nmat322810.1038/nmat3228 ↗
30. 10.1021/am500777b10.1021/am500777b ↗
31. 10.1088/1742-6596/352/1/01201710.1088/1742-6596/352/1/012017 ↗
32. 10.1021/jp205999p10.1021/jp205999p ↗
33. 10.1038/nnano.2008.6710.1038/nnano.2008.67 ↗
34. 10.1007/s00232-005-7006-810.1007/s00232-005-7006-8 ↗